High Flat Gain and Broadband Millimeter-Wave Distributed Doherty Low Noise Amplifier for 5G Applications Using GaAs-pHEMT Technology
A new structure of distributed Doherty low-noise amplifier is implemented on a GaAs pHEMT substrate, using the ED02AH process design kit tailored for 5G applications. This circuit exhibits high linear gain and a consistent noise factor across the frequency range of 22 to 42 GHz. The LNA comprises 10...
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| Veröffentlicht in: | Russian microelectronics 2024, Vol.53 (4), p.362-369 |
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| container_title | Russian microelectronics |
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| creator | Moustapha El Bakkali El Moudden, Hanaa El Ftouh, Hanae Touhami, Naima Amar |
| description | A new structure of distributed Doherty low-noise amplifier is implemented on a GaAs pHEMT substrate, using the ED02AH process design kit tailored for 5G applications. This circuit exhibits high linear gain and a consistent noise factor across the frequency range of 22 to 42 GHz. The LNA comprises 10 cells distributed across two stages, with a performance adjustment circuit added to the source electrode of each transistor. Operating with a
V
GS
= –0.15 V and
V
DS
= 1.8 V bias, the LNA delivers an S
21
gain of 22.5 ± 2.5 dB and noise figure of 3 ± 0.55 dB, consuming 980 mW of power. The linear performance of the LNA is affirmed by an input 1 dB compression point (IP
1dB
) of 11 dBm and a third-order input intercept point (IIP3) of 13 dBm. With a surface area of 2.9 × 1.2 mm
2
, the LNA has a figure of merit of 73.14, demonstrating the high efficiency of the proposed Doherty distributed structure. |
| doi_str_mv | 10.1134/S1063739724600031 |
| format | Article |
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V
GS
= –0.15 V and
V
DS
= 1.8 V bias, the LNA delivers an S
21
gain of 22.5 ± 2.5 dB and noise figure of 3 ± 0.55 dB, consuming 980 mW of power. The linear performance of the LNA is affirmed by an input 1 dB compression point (IP
1dB
) of 11 dBm and a third-order input intercept point (IIP3) of 13 dBm. With a surface area of 2.9 × 1.2 mm
2
, the LNA has a figure of merit of 73.14, demonstrating the high efficiency of the proposed Doherty distributed structure.</description><identifier>ISSN: 1063-7397</identifier><identifier>EISSN: 1608-3415</identifier><identifier>DOI: 10.1134/S1063739724600031</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>5G mobile communication ; Amplifiers ; Broadband ; Design factors ; Electrical Engineering ; Engineering ; Figure of merit ; Frequency ranges ; Gallium arsenide ; Low noise ; Millimeter waves ; Noise factor ; Noise levels ; Substrates</subject><ispartof>Russian microelectronics, 2024, Vol.53 (4), p.362-369</ispartof><rights>Pleiades Publishing, Ltd. 2024. ISSN 1063-7397, Russian Microelectronics, 2024, Vol. 53, No. 4, pp. 362–369. © Pleiades Publishing, Ltd., 2024.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1131-3225ae569c37439050edc05f27d0c7659f108cb3415af9c6810d12f80167b5683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063739724600031$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063739724600031$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Moustapha El Bakkali</creatorcontrib><creatorcontrib>El Moudden, Hanaa</creatorcontrib><creatorcontrib>El Ftouh, Hanae</creatorcontrib><creatorcontrib>Touhami, Naima Amar</creatorcontrib><title>High Flat Gain and Broadband Millimeter-Wave Distributed Doherty Low Noise Amplifier for 5G Applications Using GaAs-pHEMT Technology</title><title>Russian microelectronics</title><addtitle>Russ Microelectron</addtitle><description>A new structure of distributed Doherty low-noise amplifier is implemented on a GaAs pHEMT substrate, using the ED02AH process design kit tailored for 5G applications. This circuit exhibits high linear gain and a consistent noise factor across the frequency range of 22 to 42 GHz. The LNA comprises 10 cells distributed across two stages, with a performance adjustment circuit added to the source electrode of each transistor. Operating with a
V
GS
= –0.15 V and
V
DS
= 1.8 V bias, the LNA delivers an S
21
gain of 22.5 ± 2.5 dB and noise figure of 3 ± 0.55 dB, consuming 980 mW of power. The linear performance of the LNA is affirmed by an input 1 dB compression point (IP
1dB
) of 11 dBm and a third-order input intercept point (IIP3) of 13 dBm. With a surface area of 2.9 × 1.2 mm
2
, the LNA has a figure of merit of 73.14, demonstrating the high efficiency of the proposed Doherty distributed structure.</description><subject>5G mobile communication</subject><subject>Amplifiers</subject><subject>Broadband</subject><subject>Design factors</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Figure of merit</subject><subject>Frequency ranges</subject><subject>Gallium arsenide</subject><subject>Low noise</subject><subject>Millimeter waves</subject><subject>Noise factor</subject><subject>Noise levels</subject><subject>Substrates</subject><issn>1063-7397</issn><issn>1608-3415</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kD9PwzAQxSMEEqXwAdgsMQfOcewkY-lfpBYGWjFGjmOnrtI42CmoOx8cR0ViQEx3unu_d3oXBLcY7jEm8cMrBkYSkiVRzACA4LNggBmkIYkxPfe9X4f9_jK4cm4HgAEYGwRfC11t0azmHZpz3SDelOjRGl4WfbfSda33spM2fOMfEk2066wuDp0s0cRspe2OaGk-0bPRTqLRvq210tIiZSyiczRq_UDwTpvGoY3TTeWPjFzYLqarNVpLsW1MbarjdXCheO3kzU8dBpvZdD1ehMuX-dN4tAyFz4hDEkWUS8oyQZKYZEBBlgKoipISRMJopjCkougTc5UJlmIocaRSwCwpKEvJMLg7-bbWvB-k6_KdOdjGn8yJRxMCOAKvwieVsMY5K1XeWr3n9phjyPtn53-e7ZnoxDivbSppf53_h74BV0B-3g</recordid><startdate>2024</startdate><enddate>2024</enddate><creator>Moustapha El Bakkali</creator><creator>El Moudden, Hanaa</creator><creator>El Ftouh, Hanae</creator><creator>Touhami, Naima Amar</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2024</creationdate><title>High Flat Gain and Broadband Millimeter-Wave Distributed Doherty Low Noise Amplifier for 5G Applications Using GaAs-pHEMT Technology</title><author>Moustapha El Bakkali ; El Moudden, Hanaa ; El Ftouh, Hanae ; Touhami, Naima Amar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1131-3225ae569c37439050edc05f27d0c7659f108cb3415af9c6810d12f80167b5683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>5G mobile communication</topic><topic>Amplifiers</topic><topic>Broadband</topic><topic>Design factors</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Figure of merit</topic><topic>Frequency ranges</topic><topic>Gallium arsenide</topic><topic>Low noise</topic><topic>Millimeter waves</topic><topic>Noise factor</topic><topic>Noise levels</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moustapha El Bakkali</creatorcontrib><creatorcontrib>El Moudden, Hanaa</creatorcontrib><creatorcontrib>El Ftouh, Hanae</creatorcontrib><creatorcontrib>Touhami, Naima Amar</creatorcontrib><collection>CrossRef</collection><jtitle>Russian microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moustapha El Bakkali</au><au>El Moudden, Hanaa</au><au>El Ftouh, Hanae</au><au>Touhami, Naima Amar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Flat Gain and Broadband Millimeter-Wave Distributed Doherty Low Noise Amplifier for 5G Applications Using GaAs-pHEMT Technology</atitle><jtitle>Russian microelectronics</jtitle><stitle>Russ Microelectron</stitle><date>2024</date><risdate>2024</risdate><volume>53</volume><issue>4</issue><spage>362</spage><epage>369</epage><pages>362-369</pages><issn>1063-7397</issn><eissn>1608-3415</eissn><abstract>A new structure of distributed Doherty low-noise amplifier is implemented on a GaAs pHEMT substrate, using the ED02AH process design kit tailored for 5G applications. This circuit exhibits high linear gain and a consistent noise factor across the frequency range of 22 to 42 GHz. The LNA comprises 10 cells distributed across two stages, with a performance adjustment circuit added to the source electrode of each transistor. Operating with a
V
GS
= –0.15 V and
V
DS
= 1.8 V bias, the LNA delivers an S
21
gain of 22.5 ± 2.5 dB and noise figure of 3 ± 0.55 dB, consuming 980 mW of power. The linear performance of the LNA is affirmed by an input 1 dB compression point (IP
1dB
) of 11 dBm and a third-order input intercept point (IIP3) of 13 dBm. With a surface area of 2.9 × 1.2 mm
2
, the LNA has a figure of merit of 73.14, demonstrating the high efficiency of the proposed Doherty distributed structure.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063739724600031</doi><tpages>8</tpages></addata></record> |
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| issn | 1063-7397 1608-3415 |
| language | eng |
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| source | SpringerNature Journals |
| subjects | 5G mobile communication Amplifiers Broadband Design factors Electrical Engineering Engineering Figure of merit Frequency ranges Gallium arsenide Low noise Millimeter waves Noise factor Noise levels Substrates |
| title | High Flat Gain and Broadband Millimeter-Wave Distributed Doherty Low Noise Amplifier for 5G Applications Using GaAs-pHEMT Technology |
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