Dislocation Structure of AlN/SiC Templates Grown by Sublimation

The dislocation structure of an AlN layer grown on a SiC substrate by sublimation was studied using transmission electron microscopy. The peculiarity of the growth method was the evaporation of the substrate during the growth of the layer to prevent its cracking. The purpose of the study was to iden...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2024-04, Vol.58 (4), p.323-326
Hauptverfasser:	Kalmykov, A. E., Myasoedov, A. V., Sorokin, L. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Evaporation Magnetic Materials Magnetism Physics Physics and Astronomy Silicon substrates Sublimation Threading dislocations
Online-Zugang:	Volltext
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