Formation and properties of silicon vacancies in MPCVD-grown polycrystalline diamond

This study is aimed to have an understanding of the formation of silicon vacancy (SiV) colour centres in diamond during thin film growth of diamond in microwave plasma CVD reactor. The study focusses on different sources of silicon impurities in the chamber and the possibility of controlling the for...

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Veröffentlicht in:	Bulletin of materials science 2024-09, Vol.47 (4), p.228, Article 228
Hauptverfasser:	Raj, Rahul, Pradeep, K G, Rao, M S Ramachandra
Format:	Artikel
Sprache:	eng
Schlagworte:	Alumina Atoms & subatomic particles Chambers Chemistry and Materials Science Color centers Diamond films Diamonds Engineering Film growth Hydrogen Indian Materials Research Conclave 2023 Lasers Materials Science Microwave plasmas Molybdenum Nitrogen Photoluminescence Plasma Point defects Polycrystalline diamond Polycrystals Silicon Silicon substrates Temperature Thin films
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