Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy
This study investigates the design of MOD-FETs (modulation-doped field effect transistors) using β-Ga 2 O 3 as the substrate material. The main focus is on understanding the impact of self-heating on the alteration of mobility of electrons profile. This paper introduces a model that takes into accou...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2024-09, Vol.35 (26), p.1710, Article 1710 |
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| creator | Kumaran, V. N. Senthil Venkatesh, M. Mubarakali, Azath Alqahtani, Abdulrahman Saad Parthasarathy, P. |
| description | This study investigates the design of MOD-FETs (modulation-doped field effect transistors) using β-Ga
2
O
3
as the substrate material. The main focus is on understanding the impact of self-heating on the alteration of mobility of electrons profile. This paper introduces a model that takes into account the influence on temperature and doping on the electron mobility in β-Ga
2
O
3
. Furthermore, it offers estimations for the conductivity of heat of β-Ga
2
O
3
, considering the influence of temperature and crystalline orientation. Furthermore, we showcase a practical example of modulation-doped β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
using a tri-metal FET where the energy level difference between the conduction bands and the presence of undesired channels in the barrier layer determines the maximum sheet carrier density in this structure. These channels enable the transfer of electrons from both the bottom and upper portions of the β-Ga
2
O
3
quantum well. Using modulation doping, the proposed structure exhibited an ultimate current drain of 250 mA/m, a peak conductivity of 40 ms/m, and a potential of 10.0 V at ambient temperature. The electrical characteristics of the TMG device were evaluated by comparing it to the double-metal gate (DMG) device using the Atlas Silvaco TCAD simulation for analysis of performance. The results indicate that, the suggested device exhibits greater efficiency in terms of conductivity, current gain cut-off frequency, and energy gain cut-off frequency as compared to DMG transistors. The measured electric field in this example is a consequence of using a Tri-Metal Gate architecture (TMG) to regulate the channel. The designed setup achieves peak frequency of 45.5/50.5 gigahertz with a gate length of 0.2 mm. This discovery highlights the potential of using the β-(Al
x
Ga
1−x
)
2
O
3
/Ga
2
O
3
with tri-metal FET architecture as a promising method for high-power radio frequency operations. |
| doi_str_mv | 10.1007/s10854-024-13430-6 |
| format | Article |
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2
O
3
as the substrate material. The main focus is on understanding the impact of self-heating on the alteration of mobility of electrons profile. This paper introduces a model that takes into account the influence on temperature and doping on the electron mobility in β-Ga
2
O
3
. Furthermore, it offers estimations for the conductivity of heat of β-Ga
2
O
3
, considering the influence of temperature and crystalline orientation. Furthermore, we showcase a practical example of modulation-doped β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
using a tri-metal FET where the energy level difference between the conduction bands and the presence of undesired channels in the barrier layer determines the maximum sheet carrier density in this structure. These channels enable the transfer of electrons from both the bottom and upper portions of the β-Ga
2
O
3
quantum well. Using modulation doping, the proposed structure exhibited an ultimate current drain of 250 mA/m, a peak conductivity of 40 ms/m, and a potential of 10.0 V at ambient temperature. The electrical characteristics of the TMG device were evaluated by comparing it to the double-metal gate (DMG) device using the Atlas Silvaco TCAD simulation for analysis of performance. The results indicate that, the suggested device exhibits greater efficiency in terms of conductivity, current gain cut-off frequency, and energy gain cut-off frequency as compared to DMG transistors. The measured electric field in this example is a consequence of using a Tri-Metal Gate architecture (TMG) to regulate the channel. The designed setup achieves peak frequency of 45.5/50.5 gigahertz with a gate length of 0.2 mm. This discovery highlights the potential of using the β-(Al
x
Ga
1−x
)
2
O
3
/Ga
2
O
3
with tri-metal FET architecture as a promising method for high-power radio frequency operations.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-13430-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Ambient temperature ; Banded structure ; Barrier layers ; Carrier density ; Channels ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Conduction bands ; Doping ; Electric fields ; Electrical resistivity ; Electron mobility ; Electrons ; Energy levels ; Field effect transistors ; Gallium oxides ; High vacuum ; Materials Science ; Modulation ; Modulation doping ; Molecular beam epitaxy ; Optical and Electronic Materials ; Peak frequency ; Quantum wells ; Semiconductor devices ; Substrates ; Transistors ; Vacuum deposition</subject><ispartof>Journal of materials science. Materials in electronics, 2024-09, Vol.35 (26), p.1710, Article 1710</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-714996b2ccb5c40e8ecb9633ee83be7cb19f02b3bd38f400144744bfcf78aa133</cites><orcidid>0000-0003-3771-8350</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-024-13430-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-024-13430-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Kumaran, V. N. Senthil</creatorcontrib><creatorcontrib>Venkatesh, M.</creatorcontrib><creatorcontrib>Mubarakali, Azath</creatorcontrib><creatorcontrib>Alqahtani, Abdulrahman Saad</creatorcontrib><creatorcontrib>Parthasarathy, P.</creatorcontrib><title>Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>This study investigates the design of MOD-FETs (modulation-doped field effect transistors) using β-Ga
2
O
3
as the substrate material. The main focus is on understanding the impact of self-heating on the alteration of mobility of electrons profile. This paper introduces a model that takes into account the influence on temperature and doping on the electron mobility in β-Ga
2
O
3
. Furthermore, it offers estimations for the conductivity of heat of β-Ga
2
O
3
, considering the influence of temperature and crystalline orientation. Furthermore, we showcase a practical example of modulation-doped β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
using a tri-metal FET where the energy level difference between the conduction bands and the presence of undesired channels in the barrier layer determines the maximum sheet carrier density in this structure. These channels enable the transfer of electrons from both the bottom and upper portions of the β-Ga
2
O
3
quantum well. Using modulation doping, the proposed structure exhibited an ultimate current drain of 250 mA/m, a peak conductivity of 40 ms/m, and a potential of 10.0 V at ambient temperature. The electrical characteristics of the TMG device were evaluated by comparing it to the double-metal gate (DMG) device using the Atlas Silvaco TCAD simulation for analysis of performance. The results indicate that, the suggested device exhibits greater efficiency in terms of conductivity, current gain cut-off frequency, and energy gain cut-off frequency as compared to DMG transistors. The measured electric field in this example is a consequence of using a Tri-Metal Gate architecture (TMG) to regulate the channel. The designed setup achieves peak frequency of 45.5/50.5 gigahertz with a gate length of 0.2 mm. This discovery highlights the potential of using the β-(Al
x
Ga
1−x
)
2
O
3
/Ga
2
O
3
with tri-metal FET architecture as a promising method for high-power radio frequency operations.</description><subject>Ambient temperature</subject><subject>Banded structure</subject><subject>Barrier layers</subject><subject>Carrier density</subject><subject>Channels</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Conduction bands</subject><subject>Doping</subject><subject>Electric fields</subject><subject>Electrical resistivity</subject><subject>Electron mobility</subject><subject>Electrons</subject><subject>Energy levels</subject><subject>Field effect transistors</subject><subject>Gallium oxides</subject><subject>High vacuum</subject><subject>Materials Science</subject><subject>Modulation</subject><subject>Modulation doping</subject><subject>Molecular beam epitaxy</subject><subject>Optical and Electronic Materials</subject><subject>Peak frequency</subject><subject>Quantum wells</subject><subject>Semiconductor devices</subject><subject>Substrates</subject><subject>Transistors</subject><subject>Vacuum deposition</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9UUluFDEULSEi0YRcICtLbGBh8j3UtIwi0iBFygak7Kxvl6vbUVW5sF2okxNkzVFyEA7BSTBdSOzY_OHpDYtXFOcMPjCA-iIyaEpJgUvKhBRAqxfFhpW1oLLhdy-LDbRlTWXJ-avidYz3AFBJ0WyK52vUwRlMzk8Ep46YPQY0yQb3uIK-J6PvluH40c7PtiM_n-m7y-GwRfbr6cfhPb8VF1vMk6Tg6GgTDuT64xeyJDe4RzftyDKkgHTvdnvyHc2yjKSzs4_umKAxZs98zAPGESnG6GLK0OgHa3JyINriSOzsEh4e3hQnPQ7Rnv3dp8XXHHb1id7cbj9fXd5QwwESrZls20pzY3RpJNjGGt1WQljbCG1ro1nbA9dCd6LpJQCTspZS96avG0QmxGnxdvWdg_-22JjUvV_ClCOVYCAAWi6azOIrywQfY7C9moMbMTwoBupPN2rtRuVu1LEbVWWRWEUxk6edDf-s_6P6DRgMlmE</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>Kumaran, V. N. Senthil</creator><creator>Venkatesh, M.</creator><creator>Mubarakali, Azath</creator><creator>Alqahtani, Abdulrahman Saad</creator><creator>Parthasarathy, P.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3771-8350</orcidid></search><sort><creationdate>20240901</creationdate><title>Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy</title><author>Kumaran, V. N. Senthil ; Venkatesh, M. ; Mubarakali, Azath ; Alqahtani, Abdulrahman Saad ; Parthasarathy, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-714996b2ccb5c40e8ecb9633ee83be7cb19f02b3bd38f400144744bfcf78aa133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Ambient temperature</topic><topic>Banded structure</topic><topic>Barrier layers</topic><topic>Carrier density</topic><topic>Channels</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Conduction bands</topic><topic>Doping</topic><topic>Electric fields</topic><topic>Electrical resistivity</topic><topic>Electron mobility</topic><topic>Electrons</topic><topic>Energy levels</topic><topic>Field effect transistors</topic><topic>Gallium oxides</topic><topic>High vacuum</topic><topic>Materials Science</topic><topic>Modulation</topic><topic>Modulation doping</topic><topic>Molecular beam epitaxy</topic><topic>Optical and Electronic Materials</topic><topic>Peak frequency</topic><topic>Quantum wells</topic><topic>Semiconductor devices</topic><topic>Substrates</topic><topic>Transistors</topic><topic>Vacuum deposition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumaran, V. N. Senthil</creatorcontrib><creatorcontrib>Venkatesh, M.</creatorcontrib><creatorcontrib>Mubarakali, Azath</creatorcontrib><creatorcontrib>Alqahtani, Abdulrahman Saad</creatorcontrib><creatorcontrib>Parthasarathy, P.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumaran, V. N. Senthil</au><au>Venkatesh, M.</au><au>Mubarakali, Azath</au><au>Alqahtani, Abdulrahman Saad</au><au>Parthasarathy, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-09-01</date><risdate>2024</risdate><volume>35</volume><issue>26</issue><spage>1710</spage><pages>1710-</pages><artnum>1710</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>This study investigates the design of MOD-FETs (modulation-doped field effect transistors) using β-Ga
2
O
3
as the substrate material. The main focus is on understanding the impact of self-heating on the alteration of mobility of electrons profile. This paper introduces a model that takes into account the influence on temperature and doping on the electron mobility in β-Ga
2
O
3
. Furthermore, it offers estimations for the conductivity of heat of β-Ga
2
O
3
, considering the influence of temperature and crystalline orientation. Furthermore, we showcase a practical example of modulation-doped β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
using a tri-metal FET where the energy level difference between the conduction bands and the presence of undesired channels in the barrier layer determines the maximum sheet carrier density in this structure. These channels enable the transfer of electrons from both the bottom and upper portions of the β-Ga
2
O
3
quantum well. Using modulation doping, the proposed structure exhibited an ultimate current drain of 250 mA/m, a peak conductivity of 40 ms/m, and a potential of 10.0 V at ambient temperature. The electrical characteristics of the TMG device were evaluated by comparing it to the double-metal gate (DMG) device using the Atlas Silvaco TCAD simulation for analysis of performance. The results indicate that, the suggested device exhibits greater efficiency in terms of conductivity, current gain cut-off frequency, and energy gain cut-off frequency as compared to DMG transistors. The measured electric field in this example is a consequence of using a Tri-Metal Gate architecture (TMG) to regulate the channel. The designed setup achieves peak frequency of 45.5/50.5 gigahertz with a gate length of 0.2 mm. This discovery highlights the potential of using the β-(Al
x
Ga
1−x
)
2
O
3
/Ga
2
O
3
with tri-metal FET architecture as a promising method for high-power radio frequency operations.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-13430-6</doi><orcidid>https://orcid.org/0000-0003-3771-8350</orcidid></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2024-09, Vol.35 (26), p.1710, Article 1710 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| subjects | Ambient temperature Banded structure Barrier layers Carrier density Channels Characterization and Evaluation of Materials Chemistry and Materials Science Conduction bands Doping Electric fields Electrical resistivity Electron mobility Electrons Energy levels Field effect transistors Gallium oxides High vacuum Materials Science Modulation Modulation doping Molecular beam epitaxy Optical and Electronic Materials Peak frequency Quantum wells Semiconductor devices Substrates Transistors Vacuum deposition |
| title | Fabrication and characterization of modulation-doped β-(AlxGa1−x)2O3/Ga2O3 tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy |
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