Ultra-flexible, high-performing NAN transparent electrodes for bendable optoelectronic applications
The NiO/Ag/NiO (NAN) structure, a member of the oxide/metal/oxide (OMO) structures, was developed as an alternative to conventional transparent electrodes. The fabrication process employed combination of RF-magnetron sputter and e-beam evaporation techniques, and to optimize the electrode performanc...
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creator | Akalin, Salih Alper Mateus, Tiago Ribeiro, Guilherme Deuermeier, Jonas Calmeiro, Tomas Águas, Hugo Martins, Rodrigo Vicente, António T. Mendes, Manuel J. Yilmazer Menda, Ugur Deneb |
description | The NiO/Ag/NiO (NAN) structure, a member of the oxide/metal/oxide (OMO) structures, was developed as an alternative to conventional transparent electrodes. The fabrication process employed combination of RF-magnetron sputter and e-beam evaporation techniques, and to optimize the electrode performance, the Ag layer thickness within the NAN structures was varied between 4 and 20 nm. The resulting configurations were evaluated through the Fraser-Cook and Haacke figures of merit (FoM). The optimized structure exhibited high optical transmittance of 75% and a low sheet resistance (R
S
) of ∼5 Ω/□. Compared to a commercial sample of indium tin oxide (ITO) coated polyethylene terephthalate (PET), the NAN/PET structures show higher Fraser-Cook FoM, closely aligned with the Haacke FoM, owing to their lower R
S
values. In addition, the flexural resistance of the electrodes was assessed by subjecting the samples to 10,000 bending cycles. Following this test, the R
S
value of ITO/PET increased 26.3 times to 3312.89 Ω/□, while the NAN/PET only increased 1.25 times to 7.82 Ω/□. Even the least performing NAN sample, deposited on polyethylene naphthalate (NAN/PEN), experienced a moderate increase in resistance, stabilizing at 59.93 Ω/□. The obtained results highlight the great potential of the NAN structure as an electrode for flexible optoelectronic devices. |
doi_str_mv | 10.1007/s10854-024-13442-2 |
format | Article |
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S
) of ∼5 Ω/□. Compared to a commercial sample of indium tin oxide (ITO) coated polyethylene terephthalate (PET), the NAN/PET structures show higher Fraser-Cook FoM, closely aligned with the Haacke FoM, owing to their lower R
S
values. In addition, the flexural resistance of the electrodes was assessed by subjecting the samples to 10,000 bending cycles. Following this test, the R
S
value of ITO/PET increased 26.3 times to 3312.89 Ω/□, while the NAN/PET only increased 1.25 times to 7.82 Ω/□. Even the least performing NAN sample, deposited on polyethylene naphthalate (NAN/PEN), experienced a moderate increase in resistance, stabilizing at 59.93 Ω/□. The obtained results highlight the great potential of the NAN structure as an electrode for flexible optoelectronic devices.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-13442-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electrodes ; Electron beams ; Figure of merit ; Indium tin oxides ; Materials Science ; Nickel oxides ; Optical and Electronic Materials ; Optoelectronic devices ; Polyethylene naphthalate ; Polyethylene terephthalate ; Thickness</subject><ispartof>Journal of materials science. Materials in electronics, 2024-09, Vol.35 (25), p.1687, Article 1687</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-47f49cd8b700740cab600acce9f780a643d4daae973a01e63928f9db50143ef53</cites><orcidid>0000-0002-6228-7882</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-024-13442-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-024-13442-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Akalin, Salih Alper</creatorcontrib><creatorcontrib>Mateus, Tiago</creatorcontrib><creatorcontrib>Ribeiro, Guilherme</creatorcontrib><creatorcontrib>Deuermeier, Jonas</creatorcontrib><creatorcontrib>Calmeiro, Tomas</creatorcontrib><creatorcontrib>Águas, Hugo</creatorcontrib><creatorcontrib>Martins, Rodrigo</creatorcontrib><creatorcontrib>Vicente, António T.</creatorcontrib><creatorcontrib>Mendes, Manuel J.</creatorcontrib><creatorcontrib>Yilmazer Menda, Ugur Deneb</creatorcontrib><title>Ultra-flexible, high-performing NAN transparent electrodes for bendable optoelectronic applications</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The NiO/Ag/NiO (NAN) structure, a member of the oxide/metal/oxide (OMO) structures, was developed as an alternative to conventional transparent electrodes. The fabrication process employed combination of RF-magnetron sputter and e-beam evaporation techniques, and to optimize the electrode performance, the Ag layer thickness within the NAN structures was varied between 4 and 20 nm. The resulting configurations were evaluated through the Fraser-Cook and Haacke figures of merit (FoM). The optimized structure exhibited high optical transmittance of 75% and a low sheet resistance (R
S
) of ∼5 Ω/□. Compared to a commercial sample of indium tin oxide (ITO) coated polyethylene terephthalate (PET), the NAN/PET structures show higher Fraser-Cook FoM, closely aligned with the Haacke FoM, owing to their lower R
S
values. In addition, the flexural resistance of the electrodes was assessed by subjecting the samples to 10,000 bending cycles. Following this test, the R
S
value of ITO/PET increased 26.3 times to 3312.89 Ω/□, while the NAN/PET only increased 1.25 times to 7.82 Ω/□. Even the least performing NAN sample, deposited on polyethylene naphthalate (NAN/PEN), experienced a moderate increase in resistance, stabilizing at 59.93 Ω/□. The obtained results highlight the great potential of the NAN structure as an electrode for flexible optoelectronic devices.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electrodes</subject><subject>Electron beams</subject><subject>Figure of merit</subject><subject>Indium tin oxides</subject><subject>Materials Science</subject><subject>Nickel oxides</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Polyethylene naphthalate</subject><subject>Polyethylene terephthalate</subject><subject>Thickness</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRS0EEqXwA6wiscUwfqRJllXFS6rKhkrsLMcZt6lSO9ipBH-PIZXYsZrFnDOPS8g1gzsGUNxHBmUuKXBJmZCSU35CJiwvBJUlfz8lE6jygsqc83NyEeMOAGZSlBNi1t0QNLUdfrZ1h7fZtt1saY_B-rBv3SZbzVdZIlzsdUA3ZNihGYJvMGYJyWp0jU5i5vvBH3uuNZnu-641emi9i5fkzOou4tWxTsn68eFt8UyXr08vi_mSGg4wUFlYWZmmrIv0kQSj6xmANgYrW5Sg072NbLTGqhAaGM5ExUtbNXUOTAq0uZiSm3FuH_zHAeOgdv4QXFqpBAMmqpwLlig-Uib4GANa1Yd2r8OXYqB-wlRjmCqFqX7DVDxJYpRigt0Gw9_of6xve8F5AA</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>Akalin, Salih Alper</creator><creator>Mateus, Tiago</creator><creator>Ribeiro, Guilherme</creator><creator>Deuermeier, Jonas</creator><creator>Calmeiro, Tomas</creator><creator>Águas, Hugo</creator><creator>Martins, Rodrigo</creator><creator>Vicente, António T.</creator><creator>Mendes, Manuel J.</creator><creator>Yilmazer Menda, Ugur Deneb</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6228-7882</orcidid></search><sort><creationdate>20240901</creationdate><title>Ultra-flexible, high-performing NAN transparent electrodes for bendable optoelectronic applications</title><author>Akalin, Salih Alper ; Mateus, Tiago ; Ribeiro, Guilherme ; Deuermeier, Jonas ; Calmeiro, Tomas ; Águas, Hugo ; Martins, Rodrigo ; Vicente, António T. ; Mendes, Manuel J. ; Yilmazer Menda, Ugur Deneb</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-47f49cd8b700740cab600acce9f780a643d4daae973a01e63928f9db50143ef53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electrodes</topic><topic>Electron beams</topic><topic>Figure of merit</topic><topic>Indium tin oxides</topic><topic>Materials Science</topic><topic>Nickel oxides</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronic devices</topic><topic>Polyethylene naphthalate</topic><topic>Polyethylene terephthalate</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akalin, Salih Alper</creatorcontrib><creatorcontrib>Mateus, Tiago</creatorcontrib><creatorcontrib>Ribeiro, Guilherme</creatorcontrib><creatorcontrib>Deuermeier, Jonas</creatorcontrib><creatorcontrib>Calmeiro, Tomas</creatorcontrib><creatorcontrib>Águas, Hugo</creatorcontrib><creatorcontrib>Martins, Rodrigo</creatorcontrib><creatorcontrib>Vicente, António T.</creatorcontrib><creatorcontrib>Mendes, Manuel J.</creatorcontrib><creatorcontrib>Yilmazer Menda, Ugur Deneb</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. 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Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-09-01</date><risdate>2024</risdate><volume>35</volume><issue>25</issue><spage>1687</spage><pages>1687-</pages><artnum>1687</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The NiO/Ag/NiO (NAN) structure, a member of the oxide/metal/oxide (OMO) structures, was developed as an alternative to conventional transparent electrodes. The fabrication process employed combination of RF-magnetron sputter and e-beam evaporation techniques, and to optimize the electrode performance, the Ag layer thickness within the NAN structures was varied between 4 and 20 nm. The resulting configurations were evaluated through the Fraser-Cook and Haacke figures of merit (FoM). The optimized structure exhibited high optical transmittance of 75% and a low sheet resistance (R
S
) of ∼5 Ω/□. Compared to a commercial sample of indium tin oxide (ITO) coated polyethylene terephthalate (PET), the NAN/PET structures show higher Fraser-Cook FoM, closely aligned with the Haacke FoM, owing to their lower R
S
values. In addition, the flexural resistance of the electrodes was assessed by subjecting the samples to 10,000 bending cycles. Following this test, the R
S
value of ITO/PET increased 26.3 times to 3312.89 Ω/□, while the NAN/PET only increased 1.25 times to 7.82 Ω/□. Even the least performing NAN sample, deposited on polyethylene naphthalate (NAN/PEN), experienced a moderate increase in resistance, stabilizing at 59.93 Ω/□. The obtained results highlight the great potential of the NAN structure as an electrode for flexible optoelectronic devices.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-13442-2</doi><orcidid>https://orcid.org/0000-0002-6228-7882</orcidid></addata></record> |
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subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electrodes Electron beams Figure of merit Indium tin oxides Materials Science Nickel oxides Optical and Electronic Materials Optoelectronic devices Polyethylene naphthalate Polyethylene terephthalate Thickness |
title | Ultra-flexible, high-performing NAN transparent electrodes for bendable optoelectronic applications |
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