Polycrystalline T- and H-Nb2O5 Thin Films Prepared by Pulsed Laser Deposition: Impact of Laser Fluence
Polycrystalline structures of T-Nb 2 O 5 and a remarkable H-Nb 2 O 5 structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm −2 . Raman bands of the prepared films are...
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Veröffentlicht in: | Journal of electronic materials 2024-10, Vol.53 (10), p.6482-6497 |
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Sprache: | eng |
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