Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology

A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It w...

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Veröffentlicht in:	Technical physics letters 2024-02, Vol.50 (2), p.239-243
Hauptverfasser:	Shalygina, T. A., Rudenko, M. S., Nemtsev, I. V., Parfenov, V. A., Voronina, S. Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Classical and Continuum Physics Control surfaces Morphology Nanowires Parameter modification Physics Physics and Astronomy Raman spectroscopy Silicon carbide
Online-Zugang:	Volltext
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