Voltage-frequency dependence of the complex dielectric and electric modulus and the determination of the interface-state density distribution from the capacitance-frequency measurements of Al/p-Si/Al and Al/V2O5/p-Si/Al structures

The energy distribution of the interface states ( N ss ) and relaxation time (τ) are calculated from the capacitance-frequency ( C-f ) characteristics for Al/p-type Si/Al metal-semiconductor and Al/V 2 O 5 /p-type Si/Al metal–interfacial layer–semiconductor diodes with and without anodic surface pas...

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