Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer

The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped npn light-emitting devices is observed below the breakdown field strength...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2024-08, Vol.35 (23), p.1603, Article 1603
Hauptverfasser:	Wang, Yuan, Lin, Sichen, Pang, Houwei, Wu, Yunfeng, Yang, Deren, Li, Dongsheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Barrier layers Characterization and Evaluation of Materials Chemistry and Materials Science Degradation Devices Diffusion barriers Diffusion layers Diffusion rate Electric field strength Electrodes Electromigration Erbium Grain boundaries Indium tin oxides Interface reactions Materials Science Optical and Electronic Materials Optoelectronic devices
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