Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer
The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped npn light-emitting devices is observed below the breakdown field strength...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2024-08, Vol.35 (23), p.1603, Article 1603 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 23 |
| container_start_page | 1603 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 35 |
| creator | Wang, Yuan Lin, Sichen Pang, Houwei Wu, Yunfeng Yang, Deren Li, Dongsheng |
| description | The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped
npn
light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO
3
barrier into Er-doped
npn
devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO
3
layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO
3
layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions. |
| doi_str_mv | 10.1007/s10854-024-13332-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3094914738</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3094914738</sourcerecordid><originalsourceid>FETCH-LOGICAL-c200t-65d3fcc50741c06f2a05293f157a1fba9c9acbdad2ce1b28d6a6fdb2f029bca53</originalsourceid><addsrcrecordid>eNp9kMtKA0EQRRtRMEZ_wFWD69bqx7yWEnxBJAsjuGt6-hEmTGbG6hkhf29rFHeuioJ7blGHkEsO1xyguIkcykwxEIpxKaVgxRGZ8ayQTJXi7ZjMoMoKpjIhTslZjFsAyJUsZ6R5mYYBfYxNt6HOb9A4MzZ9R_tAn9Yr6ltvR-ydp6HH362ddk3no_Wd9Qn6aNKo93RE08XBoO9G-tyvJK0NYuORtmbv8ZycBNNGf_Ez5-T1_m69eGTL1cPT4nbJrAAYWZ45GazNoFDcQh6EgUxUMqRnDA-1qWxlbO2ME9bzWpQuN3lwtQggqtqaTM7J1aF3wP598nHU237CLp3UEipVcVXIMqXEIWWxjxF90AM2O4N7zUF_KdUHpTop1d9KdZEgeYBiCncbj3_V_1CfKjV75w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3094914738</pqid></control><display><type>article</type><title>Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer</title><source>SpringerLink Journals</source><creator>Wang, Yuan ; Lin, Sichen ; Pang, Houwei ; Wu, Yunfeng ; Yang, Deren ; Li, Dongsheng</creator><creatorcontrib>Wang, Yuan ; Lin, Sichen ; Pang, Houwei ; Wu, Yunfeng ; Yang, Deren ; Li, Dongsheng</creatorcontrib><description>The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped
npn
light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO
3
barrier into Er-doped
npn
devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO
3
layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO
3
layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-13332-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Barrier layers ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Degradation ; Devices ; Diffusion barriers ; Diffusion layers ; Diffusion rate ; Electric field strength ; Electrodes ; Electromigration ; Erbium ; Grain boundaries ; Indium tin oxides ; Interface reactions ; Materials Science ; Optical and Electronic Materials ; Optoelectronic devices</subject><ispartof>Journal of materials science. Materials in electronics, 2024-08, Vol.35 (23), p.1603, Article 1603</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-65d3fcc50741c06f2a05293f157a1fba9c9acbdad2ce1b28d6a6fdb2f029bca53</cites><orcidid>0000-0001-6836-3869</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-024-13332-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-024-13332-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Wang, Yuan</creatorcontrib><creatorcontrib>Lin, Sichen</creatorcontrib><creatorcontrib>Pang, Houwei</creatorcontrib><creatorcontrib>Wu, Yunfeng</creatorcontrib><creatorcontrib>Yang, Deren</creatorcontrib><creatorcontrib>Li, Dongsheng</creatorcontrib><title>Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped
npn
light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO
3
barrier into Er-doped
npn
devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO
3
layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO
3
layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.</description><subject>Barrier layers</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Degradation</subject><subject>Devices</subject><subject>Diffusion barriers</subject><subject>Diffusion layers</subject><subject>Diffusion rate</subject><subject>Electric field strength</subject><subject>Electrodes</subject><subject>Electromigration</subject><subject>Erbium</subject><subject>Grain boundaries</subject><subject>Indium tin oxides</subject><subject>Interface reactions</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKA0EQRRtRMEZ_wFWD69bqx7yWEnxBJAsjuGt6-hEmTGbG6hkhf29rFHeuioJ7blGHkEsO1xyguIkcykwxEIpxKaVgxRGZ8ayQTJXi7ZjMoMoKpjIhTslZjFsAyJUsZ6R5mYYBfYxNt6HOb9A4MzZ9R_tAn9Yr6ltvR-ydp6HH362ddk3no_Wd9Qn6aNKo93RE08XBoO9G-tyvJK0NYuORtmbv8ZycBNNGf_Ez5-T1_m69eGTL1cPT4nbJrAAYWZ45GazNoFDcQh6EgUxUMqRnDA-1qWxlbO2ME9bzWpQuN3lwtQggqtqaTM7J1aF3wP598nHU237CLp3UEipVcVXIMqXEIWWxjxF90AM2O4N7zUF_KdUHpTop1d9KdZEgeYBiCncbj3_V_1CfKjV75w</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>Wang, Yuan</creator><creator>Lin, Sichen</creator><creator>Pang, Houwei</creator><creator>Wu, Yunfeng</creator><creator>Yang, Deren</creator><creator>Li, Dongsheng</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6836-3869</orcidid></search><sort><creationdate>20240801</creationdate><title>Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer</title><author>Wang, Yuan ; Lin, Sichen ; Pang, Houwei ; Wu, Yunfeng ; Yang, Deren ; Li, Dongsheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-65d3fcc50741c06f2a05293f157a1fba9c9acbdad2ce1b28d6a6fdb2f029bca53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Barrier layers</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Degradation</topic><topic>Devices</topic><topic>Diffusion barriers</topic><topic>Diffusion layers</topic><topic>Diffusion rate</topic><topic>Electric field strength</topic><topic>Electrodes</topic><topic>Electromigration</topic><topic>Erbium</topic><topic>Grain boundaries</topic><topic>Indium tin oxides</topic><topic>Interface reactions</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronic devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Yuan</creatorcontrib><creatorcontrib>Lin, Sichen</creatorcontrib><creatorcontrib>Pang, Houwei</creatorcontrib><creatorcontrib>Wu, Yunfeng</creatorcontrib><creatorcontrib>Yang, Deren</creatorcontrib><creatorcontrib>Li, Dongsheng</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Yuan</au><au>Lin, Sichen</au><au>Pang, Houwei</au><au>Wu, Yunfeng</au><au>Yang, Deren</au><au>Li, Dongsheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-08-01</date><risdate>2024</risdate><volume>35</volume><issue>23</issue><spage>1603</spage><pages>1603-</pages><artnum>1603</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The degradation of Indium tin oxide (ITO), a widely used electrode in optoelectronic devices, reduces the reliability of devices and even results in the irreversible failure of devices. Herein, irreversible failure of Er-doped
npn
light-emitting devices is observed below the breakdown field strength, which originates from the migration of metal ions from the ITO electrode under high electric fields. By inserting a MoO
3
barrier into Er-doped
npn
devices, the migration of metal ions from the ITO electrode is effectively suppressed to prevent contamination of the luminescent layer, thereby improving the operational stability and doubling the optical power density. The blocking effect of the MoO
3
layer on the electromigration of metal ions comes from the elimination of grain boundaries as fast diffusion paths, as well as the spontaneous interface reaction between the MoO
3
layer and ITO electrode to form an interface with residual positive charges, which generates Coulombic repulsion on metal ions.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-13332-7</doi><orcidid>https://orcid.org/0000-0001-6836-3869</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2024-08, Vol.35 (23), p.1603, Article 1603 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_3094914738 |
| source | SpringerLink Journals |
| subjects | Barrier layers Characterization and Evaluation of Materials Chemistry and Materials Science Degradation Devices Diffusion barriers Diffusion layers Diffusion rate Electric field strength Electrodes Electromigration Erbium Grain boundaries Indium tin oxides Interface reactions Materials Science Optical and Electronic Materials Optoelectronic devices |
| title | Suppressing degradation of ITO electrode for electroluminescence device by transparent MoO3 barrier layer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T01%3A51%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Suppressing%20degradation%20of%20ITO%20electrode%20for%20electroluminescence%20device%20by%20transparent%20MoO3%20barrier%20layer&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Wang,%20Yuan&rft.date=2024-08-01&rft.volume=35&rft.issue=23&rft.spage=1603&rft.pages=1603-&rft.artnum=1603&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-024-13332-7&rft_dat=%3Cproquest_cross%3E3094914738%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3094914738&rft_id=info:pmid/&rfr_iscdi=true |