Dielectric, magnetic and magnetoelectric properties of laminated thick films of coppercobalt ferrite and lead zirconium titanate

The Magnetoelectric composites with thickness of 0.3mm of high piezoelectric voltage coefficient material, PbZr0.58Ti0.42O3 and magnetostrictive material, Cu0.6Co0.4Fe2O4 were fabricated by Screen printing method. XRD analysis indicates the presence of inverse cubic spinel structure in the ferrite p...

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Hauptverfasser: Bhavana, H. V., Bellad, S. S.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The Magnetoelectric composites with thickness of 0.3mm of high piezoelectric voltage coefficient material, PbZr0.58Ti0.42O3 and magnetostrictive material, Cu0.6Co0.4Fe2O4 were fabricated by Screen printing method. XRD analysis indicates the presence of inverse cubic spinel structure in the ferrite phase and tetragonal perovskite structure in the ferroelectric phase. The computed lattice parameters and crystallite sizes for both ferrite and ferroelectric phases correspond well with values reported for comparable systems. Based on space charge polarization mechanism, the dielectric constant and loss tangent with frequency are explained for laminated films of Cu0.6Co0.4Fe2O4/PbZr0.58Ti0.42O3/Cu0.6Co0.4Fe2O4 and PbZr0.58Ti0.42O3/Cu0.6Co0.4Fe2O4/PbZr0.58Ti0.42O3. The magnetization hysteresis loop characteristics for both laminated thick films demonstrate that the loops are completely saturated and reveal the presence of an ordered magnetic structure. The DC resistivity graphs show that the resistivity of laminated film composites decreases with increasing temperature, demonstrating semiconductor behaviour in both layered composites. In a DC magnetic field range of 200Oe to 400Oe, the peak values of the ME coefficient in laminated thick film composites of Cu0.6Co0.4Fe2O4/PbZr0.58Ti0.42O3/Cu0.6Co0.4Fe2O4 and PbZr0.58Ti0.42O3/Cu0.6Co0.4Fe2O4/PbZr0.58Ti0.42O3 are 91 mV/Oecm and 83 mV/Oecm.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0224403