Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (...

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Veröffentlicht in:	arXiv.org 2024-08
Hauptverfasser:	Aller, Henry T, Pfeifer, Thomas W, Mamun, Abdullah, Huynh, Kenny, Tadjer, Marko, Feygelson, Tatyana, Hobart, Karl, Anderson, Travis, Pate, Bradford, Jacobs, Alan, James Spencer Lundh, Goorsky, Mark, Khan, Asif, Hopkins, Patrick, Graham, Samuel
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Chemical vapor deposition Diamonds Fast Fourier transformations Fourier transforms Hydrogen plasma Image enhancement Interfaces Interlayers Measurement techniques Semiconductor devices Silicon carbide Thermal management Thermal resistance Thermodynamic properties Thickness Time domain analysis Vapor resistance
Online-Zugang:	Volltext
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