Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits

In this research, the thermal stability of single-stage amplifiers based on a 4H-SiC MOSFET with a TiN gate electrode was investigated. The results show that after 100 h aging at 400 °C in N 2 ambient, the amplifier maintained good performance with stable voltage gain. The thermal stability of the a...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-08, Vol.63 (8), p.86503
Hauptverfasser:	Van Cuong, Vuong, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC MOSFET Amplification amplifier Amplifiers Contact resistance Current leakage Electrodes harsh environment High temperature high-temperature integrated circuit (IC) Integrated circuits Leakage current MOSFETs Silicon carbide Silicon carbide (SiC) Silicon dioxide Thermal stability TiN gate electrode Voltage gain
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