Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes
This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 2024-08, Vol.63 (8), p.084001 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 8 |
container_start_page | 084001 |
container_title | Japanese Journal of Applied Physics |
container_volume | 63 |
creator | Aldhehabi, Samer Abdulsalam Belkerk, Boubakeur Essedik Zernadji, Raouia Achour, Amine Djouadi, Mohamed Abdou |
description | This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay times reduced to 440 ns and 320 ns, respectively. Our study, focusing on ZnO nanorod PDs, not only demonstrates ultrafast response times but also highlights the role of hydrothermal synthesis temperature in tuning the devices’ performance. These findings represent a significant leap forward in the development of high-performance, self-powered UV PDs. The effects of different hydrothermal temperature on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements. |
doi_str_mv | 10.35848/1347-4065/ad65ab |
format | Article |
fullrecord | <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_proquest_journals_3092357072</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3092357072</sourcerecordid><originalsourceid>FETCH-LOGICAL-i184t-7c6d2743bce83f5be76615b1dedab37c5a58f99c537a8458637994aea5701caf3</originalsourceid><addsrcrecordid>eNptkE1LAzEQhoMoWKs_wFvAi5fYZPO5Ryl-QWEPWg8ihGySpbuUTdyk-PdNrejFywzzvs_MwAvAJcE3lCumFoQyiRgWfGGc4KY9ArNf6RjMMK4IYnVVnYKzlIYyCs7IDLyvt3kynUkZTj7FMCYPk992KIZPP3kH168wbkIOzmdvc5gSbE0qehjh29gsnvumKgVuij2FYTfa3BfL9WUhnYOTzmyTv_jpc7C-v3tZPqJV8_C0vF2hniiWkbTCVZLR1npFO956KQThLXHemZZKyw1XXV1bTqVRjCtBZV0z4w2XmFjT0Tm4OtyNU_jY-ZT1EHbTWF5qiuuKFk5Whbo-UH2If8AwmKgF1UpjxTAmOrr9QfQPSrD-zlrvg9X7YPUha_oFKq9yPQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3092357072</pqid></control><display><type>article</type><title>Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Aldhehabi, Samer Abdulsalam ; Belkerk, Boubakeur Essedik ; Zernadji, Raouia ; Achour, Amine ; Djouadi, Mohamed Abdou</creator><creatorcontrib>Aldhehabi, Samer Abdulsalam ; Belkerk, Boubakeur Essedik ; Zernadji, Raouia ; Achour, Amine ; Djouadi, Mohamed Abdou</creatorcontrib><description>This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay times reduced to 440 ns and 320 ns, respectively. Our study, focusing on ZnO nanorod PDs, not only demonstrates ultrafast response times but also highlights the role of hydrothermal synthesis temperature in tuning the devices’ performance. These findings represent a significant leap forward in the development of high-performance, self-powered UV PDs. The effects of different hydrothermal temperature on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ad65ab</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Crystal structure ; Energy dispersive X ray analysis ; Heterojunctions ; Hydrothermal crystal growth ; hydrothermal synthesis ; Nanorods ; Photoluminescence ; Photometers ; Photosensitivity ; Response time ; self-powered photodetectors ; Silicon dioxide ; Structural analysis ; ultrafast response ; UV photodetectors ; X ray analysis ; Zinc oxide ; ZnO nanorods</subject><ispartof>Japanese Journal of Applied Physics, 2024-08, Vol.63 (8), p.084001</ispartof><rights>2024 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ad65ab/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53824,53871</link.rule.ids></links><search><creatorcontrib>Aldhehabi, Samer Abdulsalam</creatorcontrib><creatorcontrib>Belkerk, Boubakeur Essedik</creatorcontrib><creatorcontrib>Zernadji, Raouia</creatorcontrib><creatorcontrib>Achour, Amine</creatorcontrib><creatorcontrib>Djouadi, Mohamed Abdou</creatorcontrib><title>Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay times reduced to 440 ns and 320 ns, respectively. Our study, focusing on ZnO nanorod PDs, not only demonstrates ultrafast response times but also highlights the role of hydrothermal synthesis temperature in tuning the devices’ performance. These findings represent a significant leap forward in the development of high-performance, self-powered UV PDs. The effects of different hydrothermal temperature on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements.</description><subject>Crystal structure</subject><subject>Energy dispersive X ray analysis</subject><subject>Heterojunctions</subject><subject>Hydrothermal crystal growth</subject><subject>hydrothermal synthesis</subject><subject>Nanorods</subject><subject>Photoluminescence</subject><subject>Photometers</subject><subject>Photosensitivity</subject><subject>Response time</subject><subject>self-powered photodetectors</subject><subject>Silicon dioxide</subject><subject>Structural analysis</subject><subject>ultrafast response</subject><subject>UV photodetectors</subject><subject>X ray analysis</subject><subject>Zinc oxide</subject><subject>ZnO nanorods</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNptkE1LAzEQhoMoWKs_wFvAi5fYZPO5Ryl-QWEPWg8ihGySpbuUTdyk-PdNrejFywzzvs_MwAvAJcE3lCumFoQyiRgWfGGc4KY9ArNf6RjMMK4IYnVVnYKzlIYyCs7IDLyvt3kynUkZTj7FMCYPk992KIZPP3kH168wbkIOzmdvc5gSbE0qehjh29gsnvumKgVuij2FYTfa3BfL9WUhnYOTzmyTv_jpc7C-v3tZPqJV8_C0vF2hniiWkbTCVZLR1npFO956KQThLXHemZZKyw1XXV1bTqVRjCtBZV0z4w2XmFjT0Tm4OtyNU_jY-ZT1EHbTWF5qiuuKFk5Whbo-UH2If8AwmKgF1UpjxTAmOrr9QfQPSrD-zlrvg9X7YPUha_oFKq9yPQ</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>Aldhehabi, Samer Abdulsalam</creator><creator>Belkerk, Boubakeur Essedik</creator><creator>Zernadji, Raouia</creator><creator>Achour, Amine</creator><creator>Djouadi, Mohamed Abdou</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20240801</creationdate><title>Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes</title><author>Aldhehabi, Samer Abdulsalam ; Belkerk, Boubakeur Essedik ; Zernadji, Raouia ; Achour, Amine ; Djouadi, Mohamed Abdou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i184t-7c6d2743bce83f5be76615b1dedab37c5a58f99c537a8458637994aea5701caf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Crystal structure</topic><topic>Energy dispersive X ray analysis</topic><topic>Heterojunctions</topic><topic>Hydrothermal crystal growth</topic><topic>hydrothermal synthesis</topic><topic>Nanorods</topic><topic>Photoluminescence</topic><topic>Photometers</topic><topic>Photosensitivity</topic><topic>Response time</topic><topic>self-powered photodetectors</topic><topic>Silicon dioxide</topic><topic>Structural analysis</topic><topic>ultrafast response</topic><topic>UV photodetectors</topic><topic>X ray analysis</topic><topic>Zinc oxide</topic><topic>ZnO nanorods</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aldhehabi, Samer Abdulsalam</creatorcontrib><creatorcontrib>Belkerk, Boubakeur Essedik</creatorcontrib><creatorcontrib>Zernadji, Raouia</creatorcontrib><creatorcontrib>Achour, Amine</creatorcontrib><creatorcontrib>Djouadi, Mohamed Abdou</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aldhehabi, Samer Abdulsalam</au><au>Belkerk, Boubakeur Essedik</au><au>Zernadji, Raouia</au><au>Achour, Amine</au><au>Djouadi, Mohamed Abdou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2024-08-01</date><risdate>2024</risdate><volume>63</volume><issue>8</issue><spage>084001</spage><pages>084001-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay times reduced to 440 ns and 320 ns, respectively. Our study, focusing on ZnO nanorod PDs, not only demonstrates ultrafast response times but also highlights the role of hydrothermal synthesis temperature in tuning the devices’ performance. These findings represent a significant leap forward in the development of high-performance, self-powered UV PDs. The effects of different hydrothermal temperature on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ad65ab</doi><tpages>8</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-4922 |
ispartof | Japanese Journal of Applied Physics, 2024-08, Vol.63 (8), p.084001 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_proquest_journals_3092357072 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Crystal structure Energy dispersive X ray analysis Heterojunctions Hydrothermal crystal growth hydrothermal synthesis Nanorods Photoluminescence Photometers Photosensitivity Response time self-powered photodetectors Silicon dioxide Structural analysis ultrafast response UV photodetectors X ray analysis Zinc oxide ZnO nanorods |
title | Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T03%3A50%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultrafast%20response%20self-powered%20UV%20photodetectors%20based%20on%20ZnO/SiO2/Si%20heterojunction%20diodes&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Aldhehabi,%20Samer%20Abdulsalam&rft.date=2024-08-01&rft.volume=63&rft.issue=8&rft.spage=084001&rft.pages=084001-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.35848/1347-4065/ad65ab&rft_dat=%3Cproquest_iop_j%3E3092357072%3C/proquest_iop_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3092357072&rft_id=info:pmid/&rfr_iscdi=true |