Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes

This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay...

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-08, Vol.63 (8), p.084001
Hauptverfasser: Aldhehabi, Samer Abdulsalam, Belkerk, Boubakeur Essedik, Zernadji, Raouia, Achour, Amine, Djouadi, Mohamed Abdou
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container_issue 8
container_start_page 084001
container_title Japanese Journal of Applied Physics
container_volume 63
creator Aldhehabi, Samer Abdulsalam
Belkerk, Boubakeur Essedik
Zernadji, Raouia
Achour, Amine
Djouadi, Mohamed Abdou
description This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay times reduced to 440 ns and 320 ns, respectively. Our study, focusing on ZnO nanorod PDs, not only demonstrates ultrafast response times but also highlights the role of hydrothermal synthesis temperature in tuning the devices’ performance. These findings represent a significant leap forward in the development of high-performance, self-powered UV PDs. The effects of different hydrothermal temperature on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements.
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The effects of different hydrothermal temperature on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ad65ab</doi><tpages>8</tpages></addata></record>
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subjects Crystal structure
Energy dispersive X ray analysis
Heterojunctions
Hydrothermal crystal growth
hydrothermal synthesis
Nanorods
Photoluminescence
Photometers
Photosensitivity
Response time
self-powered photodetectors
Silicon dioxide
Structural analysis
ultrafast response
UV photodetectors
X ray analysis
Zinc oxide
ZnO nanorods
title Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes
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