225 GHz triple-push RTD oscillator with 0.5 mW dc-power consumption
This study reports on a sub-mW triple-push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic...
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| Veröffentlicht in: | IET circuits, devices & systems devices & systems, 2020-03, Vol.14 (2), p.209-215 |
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| creator | Lee, Jooseok Kim, Maengkyu Park, Jaehong Lee, Jongwon |
| description | This study reports on a sub-mW triple-push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc-power consumption (PDC) of 0.5 mW with a dc-to-radio-frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm2 and an efficient triple-push topology exploiting the strong odd symmetry of the RTD I–V curve with a wide negative differential conductance voltage span of 0.46 V. |
| doi_str_mv | 10.1049/iet-cds.2019.0228 |
| format | Article |
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The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc-power consumption (PDC) of 0.5 mW with a dc-to-radio-frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm2 and an efficient triple-push topology exploiting the strong odd symmetry of the RTD I–V curve with a wide negative differential conductance voltage span of 0.46 V.</description><identifier>ISSN: 1751-858X</identifier><identifier>ISSN: 1751-8598</identifier><identifier>EISSN: 1751-8598</identifier><identifier>DOI: 10.1049/iet-cds.2019.0228</identifier><language>eng</language><publisher>Stevenage: The Institution of Engineering and Technology</publisher><subject>current density ; dc-power consumption ; dc-to-radio-frequency efficiency ; Diodes ; Efficiency ; Electric potential ; equivalent circuit ; Equivalent circuits ; frequency 225.0 GHz ; Gallium arsenide ; III-V semiconductors ; indium compounds ; indium phosphide ; Indium phosphides ; InP ; Integrated circuits ; low-power electronics ; millimetre wave diodes ; millimetre wave oscillators ; MMIC (circuits) ; MMIC amplifiers ; monolithic microwave integrated circuit process ; negative differential conductance voltage ; network topology ; Oscillators ; power 0.5 mW ; Power consumption ; Power management ; Research Article ; resonant tunnelling diodes ; RTD I–V curve ; Semiconductors ; stability test ; Stability tests ; Topology ; Transistors ; triple-push RTD oscillator ; triple-push topology ; Tunnel diodes ; Voltage ; voltage 0.4 V</subject><ispartof>IET circuits, devices & systems, 2020-03, Vol.14 (2), p.209-215</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2020 The Institution of Engineering and Technology</rights><rights>Copyright The Institution of Engineering & Technology 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4395-14d5ff87e4128996536fd9a0b453ede561ccbd726aae4c2bb36ce8a1d44523e33</citedby><cites>FETCH-LOGICAL-c4395-14d5ff87e4128996536fd9a0b453ede561ccbd726aae4c2bb36ce8a1d44523e33</cites><orcidid>0000-0002-9466-4013</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fiet-cds.2019.0228$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fiet-cds.2019.0228$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,778,782,1414,11545,27907,27908,45557,45558,46035,46459</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fiet-cds.2019.0228$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc></links><search><creatorcontrib>Lee, Jooseok</creatorcontrib><creatorcontrib>Kim, Maengkyu</creatorcontrib><creatorcontrib>Park, Jaehong</creatorcontrib><creatorcontrib>Lee, Jongwon</creatorcontrib><title>225 GHz triple-push RTD oscillator with 0.5 mW dc-power consumption</title><title>IET circuits, devices & systems</title><description>This study reports on a sub-mW triple-push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc-power consumption (PDC) of 0.5 mW with a dc-to-radio-frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm2 and an efficient triple-push topology exploiting the strong odd symmetry of the RTD I–V curve with a wide negative differential conductance voltage span of 0.46 V.</description><subject>current density</subject><subject>dc-power consumption</subject><subject>dc-to-radio-frequency efficiency</subject><subject>Diodes</subject><subject>Efficiency</subject><subject>Electric potential</subject><subject>equivalent circuit</subject><subject>Equivalent circuits</subject><subject>frequency 225.0 GHz</subject><subject>Gallium arsenide</subject><subject>III-V semiconductors</subject><subject>indium compounds</subject><subject>indium phosphide</subject><subject>Indium phosphides</subject><subject>InP</subject><subject>Integrated circuits</subject><subject>low-power electronics</subject><subject>millimetre wave diodes</subject><subject>millimetre wave oscillators</subject><subject>MMIC (circuits)</subject><subject>MMIC amplifiers</subject><subject>monolithic microwave integrated circuit process</subject><subject>negative differential conductance voltage</subject><subject>network topology</subject><subject>Oscillators</subject><subject>power 0.5 mW</subject><subject>Power consumption</subject><subject>Power management</subject><subject>Research Article</subject><subject>resonant tunnelling diodes</subject><subject>RTD I–V curve</subject><subject>Semiconductors</subject><subject>stability test</subject><subject>Stability tests</subject><subject>Topology</subject><subject>Transistors</subject><subject>triple-push RTD oscillator</subject><subject>triple-push topology</subject><subject>Tunnel diodes</subject><subject>Voltage</subject><subject>voltage 0.4 V</subject><issn>1751-858X</issn><issn>1751-8598</issn><issn>1751-8598</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LwzAAR4MoOKcfwFvBk4fUJE3axJvuPwwEnegttGnKOrqlJh1jnrz4Rf0kplTEg-IpObyX_HgAnGMUYkTFVakbqHIXEoRFiAjhB6CHE4YhZ4Ifft_58zE4cW6FEGMsintgQgj7eHufTF-DxpZ1pWG9dcvgfjEMjFNlVaWNscGubJYBClty_RTkCtZmp22gzMZt13VTms0pOCrSyumzr7MPHsejxWAK53eT2eBmDhWNBIOY5qwoeKIpJlyI2G8ocpGijLJI55rFWKksT0icppoqkmVRrDRPcU4pI5GOoj646N6trXnZatfIldnajf9SRkgQksQJx57CHaWscc7qQta2XKd2LzGSbS_pe0nfS7a9ZNvLO9edsysrvf9fkIPhA7kdIxRj5uXLTm6x70Wz0aKlfjh1XngW_sL-PewTPlGOEA</recordid><startdate>202003</startdate><enddate>202003</enddate><creator>Lee, Jooseok</creator><creator>Kim, Maengkyu</creator><creator>Park, Jaehong</creator><creator>Lee, Jongwon</creator><general>The Institution of Engineering and Technology</general><general>John Wiley & Sons, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>JQ2</scope><orcidid>https://orcid.org/0000-0002-9466-4013</orcidid></search><sort><creationdate>202003</creationdate><title>225 GHz triple-push RTD oscillator with 0.5 mW dc-power consumption</title><author>Lee, Jooseok ; Kim, Maengkyu ; Park, Jaehong ; Lee, Jongwon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4395-14d5ff87e4128996536fd9a0b453ede561ccbd726aae4c2bb36ce8a1d44523e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>current density</topic><topic>dc-power consumption</topic><topic>dc-to-radio-frequency efficiency</topic><topic>Diodes</topic><topic>Efficiency</topic><topic>Electric potential</topic><topic>equivalent circuit</topic><topic>Equivalent circuits</topic><topic>frequency 225.0 GHz</topic><topic>Gallium arsenide</topic><topic>III-V semiconductors</topic><topic>indium compounds</topic><topic>indium phosphide</topic><topic>Indium phosphides</topic><topic>InP</topic><topic>Integrated circuits</topic><topic>low-power electronics</topic><topic>millimetre wave diodes</topic><topic>millimetre wave oscillators</topic><topic>MMIC (circuits)</topic><topic>MMIC amplifiers</topic><topic>monolithic microwave integrated circuit process</topic><topic>negative differential conductance voltage</topic><topic>network topology</topic><topic>Oscillators</topic><topic>power 0.5 mW</topic><topic>Power consumption</topic><topic>Power management</topic><topic>Research Article</topic><topic>resonant tunnelling diodes</topic><topic>RTD I–V curve</topic><topic>Semiconductors</topic><topic>stability test</topic><topic>Stability tests</topic><topic>Topology</topic><topic>Transistors</topic><topic>triple-push RTD oscillator</topic><topic>triple-push topology</topic><topic>Tunnel diodes</topic><topic>Voltage</topic><topic>voltage 0.4 V</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Jooseok</creatorcontrib><creatorcontrib>Kim, Maengkyu</creatorcontrib><creatorcontrib>Park, Jaehong</creatorcontrib><creatorcontrib>Lee, Jongwon</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Computer Science Collection</collection><jtitle>IET circuits, devices & systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Jooseok</au><au>Kim, Maengkyu</au><au>Park, Jaehong</au><au>Lee, Jongwon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>225 GHz triple-push RTD oscillator with 0.5 mW dc-power consumption</atitle><jtitle>IET circuits, devices & systems</jtitle><date>2020-03</date><risdate>2020</risdate><volume>14</volume><issue>2</issue><spage>209</spage><epage>215</epage><pages>209-215</pages><issn>1751-858X</issn><issn>1751-8598</issn><eissn>1751-8598</eissn><abstract>This study reports on a sub-mW triple-push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc-power consumption (PDC) of 0.5 mW with a dc-to-radio-frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm2 and an efficient triple-push topology exploiting the strong odd symmetry of the RTD I–V curve with a wide negative differential conductance voltage span of 0.46 V.</abstract><cop>Stevenage</cop><pub>The Institution of Engineering and Technology</pub><doi>10.1049/iet-cds.2019.0228</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-9466-4013</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | current density dc-power consumption dc-to-radio-frequency efficiency Diodes Efficiency Electric potential equivalent circuit Equivalent circuits frequency 225.0 GHz Gallium arsenide III-V semiconductors indium compounds indium phosphide Indium phosphides InP Integrated circuits low-power electronics millimetre wave diodes millimetre wave oscillators MMIC (circuits) MMIC amplifiers monolithic microwave integrated circuit process negative differential conductance voltage network topology Oscillators power 0.5 mW Power consumption Power management Research Article resonant tunnelling diodes RTD I–V curve Semiconductors stability test Stability tests Topology Transistors triple-push RTD oscillator triple-push topology Tunnel diodes Voltage voltage 0.4 V |
| title | 225 GHz triple-push RTD oscillator with 0.5 mW dc-power consumption |
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