Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications
We designed a 6-bit Ka-band gallium nitride (GaN) phase shifter (PS). A low-pass T -type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90° and 180° bits. Instead, bits lower than 90° bit were...
Gespeichert in:
| Veröffentlicht in: | IEEE microwave and wireless technology letters (Print) 2023-06, Vol.33 (6), p.743-746 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 746 |
|---|---|
| container_issue | 6 |
| container_start_page | 743 |
| container_title | IEEE microwave and wireless technology letters (Print) |
| container_volume | 33 |
| creator | Kim, Sunju Jang, Seongjin Lee, Jaeyong Jeong, Hayeon Kim, Ki-Jin Park, Changkun |
| description | We designed a 6-bit Ka-band gallium nitride (GaN) phase shifter (PS). A low-pass T -type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90° and 180° bits. Instead, bits lower than 90° bit were designed to suppress loss as much as possible within a range that does not affect the entire bandwidth. To this end, the size of the series transistors constituting the low bits was increased to reduce the ON-resistance. Furthermore, the increased parasitic capacitance of the transistor reduced the required inductance, further reducing the area. The PS was designed using the 150-nm GaN HEMT process. The core size was 3.65\times0.79 mm2. At the frequency ranges of 36-39 GHz, the insertion loss and rms magnitude error were measured to be lower than 8.68 and 0.62 dB, respectively. |
| doi_str_mv | 10.1109/LMWT.2023.3237627 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_3092271479</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10025368</ieee_id><sourcerecordid>3092271479</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1399-ff5946379741f317e395a5d416c6cecdfd45d6d32e6f63a1acfcd64e0cabb6cd3</originalsourceid><addsrcrecordid>eNpNkMtqAjEUhkNpoWJ9gEIXga7H5jJJzFLFaqn2QqfYXYi51BGdmSYzC9--Myilq_9w-P5z4APgFqMhxkg-LFfrbEgQoUNKqOBEXIAeEQInko1Gl3-z-LoGgxh3CCEiOeGY9cD7s04murBwrl_gYrbK4NtWRwc_trmvXYDrvN7CLMmOVburQ2PqJjjoywAnTh_aPOTFNxxX1T43us7LIt6AK6_30Q3O2Qefj7NsukiWr_On6XiZGEylTLxnMuVUSJFiT7FwVDLNbIq54cYZ623KLLeUOO451VgbbyxPHTJ6s-HG0j64P92tQvnTuFirXdmEon2pKJKECJwK2VL4RJlQxhicV1XIDzocFUaqk6c6eaqTp87y2s7dqZM75_7xiDDKR_QX03dqSA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3092271479</pqid></control><display><type>article</type><title>Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications</title><source>IEEE Electronic Library (IEL)</source><creator>Kim, Sunju ; Jang, Seongjin ; Lee, Jaeyong ; Jeong, Hayeon ; Kim, Ki-Jin ; Park, Changkun</creator><creatorcontrib>Kim, Sunju ; Jang, Seongjin ; Lee, Jaeyong ; Jeong, Hayeon ; Kim, Ki-Jin ; Park, Changkun</creatorcontrib><description><![CDATA[We designed a 6-bit Ka-band gallium nitride (GaN) phase shifter (PS). A low-pass <inline-formula> <tex-math notation="LaTeX">T </tex-math></inline-formula>-type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90° and 180° bits. Instead, bits lower than 90° bit were designed to suppress loss as much as possible within a range that does not affect the entire bandwidth. To this end, the size of the series transistors constituting the low bits was increased to reduce the ON-resistance. Furthermore, the increased parasitic capacitance of the transistor reduced the required inductance, further reducing the area. The PS was designed using the 150-nm GaN HEMT process. The core size was <inline-formula> <tex-math notation="LaTeX">3.65\times0.79 </tex-math></inline-formula> mm2. At the frequency ranges of 36-39 GHz, the insertion loss and rms magnitude error were measured to be lower than 8.68 and 0.62 dB, respectively.]]></description><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWT.2023.3237627</identifier><identifier>CODEN: IMWTAZ</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Bandwidth ; Bandwidths ; Beamforming ; Error analysis ; Extremely high frequencies ; Frequency ranges ; Gallium nitride ; gallium nitride (GaN) ; Gallium nitrides ; HEMT ; HEMTs ; High electron mobility transistors ; Inductance ; Insertion loss ; Logic gates ; Loss measurement ; Parasitics (electronics) ; phase shifter (PS) ; Phase shifters ; Transistors</subject><ispartof>IEEE microwave and wireless technology letters (Print), 2023-06, Vol.33 (6), p.743-746</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1399-ff5946379741f317e395a5d416c6cecdfd45d6d32e6f63a1acfcd64e0cabb6cd3</citedby><cites>FETCH-LOGICAL-c1399-ff5946379741f317e395a5d416c6cecdfd45d6d32e6f63a1acfcd64e0cabb6cd3</cites><orcidid>0000-0002-4794-0062 ; 0000-0002-4699-9935</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10025368$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10025368$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Sunju</creatorcontrib><creatorcontrib>Jang, Seongjin</creatorcontrib><creatorcontrib>Lee, Jaeyong</creatorcontrib><creatorcontrib>Jeong, Hayeon</creatorcontrib><creatorcontrib>Kim, Ki-Jin</creatorcontrib><creatorcontrib>Park, Changkun</creatorcontrib><title>Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications</title><title>IEEE microwave and wireless technology letters (Print)</title><addtitle>LMWT</addtitle><description><![CDATA[We designed a 6-bit Ka-band gallium nitride (GaN) phase shifter (PS). A low-pass <inline-formula> <tex-math notation="LaTeX">T </tex-math></inline-formula>-type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90° and 180° bits. Instead, bits lower than 90° bit were designed to suppress loss as much as possible within a range that does not affect the entire bandwidth. To this end, the size of the series transistors constituting the low bits was increased to reduce the ON-resistance. Furthermore, the increased parasitic capacitance of the transistor reduced the required inductance, further reducing the area. The PS was designed using the 150-nm GaN HEMT process. The core size was <inline-formula> <tex-math notation="LaTeX">3.65\times0.79 </tex-math></inline-formula> mm2. At the frequency ranges of 36-39 GHz, the insertion loss and rms magnitude error were measured to be lower than 8.68 and 0.62 dB, respectively.]]></description><subject>Bandwidth</subject><subject>Bandwidths</subject><subject>Beamforming</subject><subject>Error analysis</subject><subject>Extremely high frequencies</subject><subject>Frequency ranges</subject><subject>Gallium nitride</subject><subject>gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>HEMT</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Inductance</subject><subject>Insertion loss</subject><subject>Logic gates</subject><subject>Loss measurement</subject><subject>Parasitics (electronics)</subject><subject>phase shifter (PS)</subject><subject>Phase shifters</subject><subject>Transistors</subject><issn>2771-957X</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkMtqAjEUhkNpoWJ9gEIXga7H5jJJzFLFaqn2QqfYXYi51BGdmSYzC9--Myilq_9w-P5z4APgFqMhxkg-LFfrbEgQoUNKqOBEXIAeEQInko1Gl3-z-LoGgxh3CCEiOeGY9cD7s04murBwrl_gYrbK4NtWRwc_trmvXYDrvN7CLMmOVburQ2PqJjjoywAnTh_aPOTFNxxX1T43us7LIt6AK6_30Q3O2Qefj7NsukiWr_On6XiZGEylTLxnMuVUSJFiT7FwVDLNbIq54cYZ623KLLeUOO451VgbbyxPHTJ6s-HG0j64P92tQvnTuFirXdmEon2pKJKECJwK2VL4RJlQxhicV1XIDzocFUaqk6c6eaqTp87y2s7dqZM75_7xiDDKR_QX03dqSA</recordid><startdate>202306</startdate><enddate>202306</enddate><creator>Kim, Sunju</creator><creator>Jang, Seongjin</creator><creator>Lee, Jaeyong</creator><creator>Jeong, Hayeon</creator><creator>Kim, Ki-Jin</creator><creator>Park, Changkun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4794-0062</orcidid><orcidid>https://orcid.org/0000-0002-4699-9935</orcidid></search><sort><creationdate>202306</creationdate><title>Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications</title><author>Kim, Sunju ; Jang, Seongjin ; Lee, Jaeyong ; Jeong, Hayeon ; Kim, Ki-Jin ; Park, Changkun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1399-ff5946379741f317e395a5d416c6cecdfd45d6d32e6f63a1acfcd64e0cabb6cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Bandwidth</topic><topic>Bandwidths</topic><topic>Beamforming</topic><topic>Error analysis</topic><topic>Extremely high frequencies</topic><topic>Frequency ranges</topic><topic>Gallium nitride</topic><topic>gallium nitride (GaN)</topic><topic>Gallium nitrides</topic><topic>HEMT</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Inductance</topic><topic>Insertion loss</topic><topic>Logic gates</topic><topic>Loss measurement</topic><topic>Parasitics (electronics)</topic><topic>phase shifter (PS)</topic><topic>Phase shifters</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Sunju</creatorcontrib><creatorcontrib>Jang, Seongjin</creatorcontrib><creatorcontrib>Lee, Jaeyong</creatorcontrib><creatorcontrib>Jeong, Hayeon</creatorcontrib><creatorcontrib>Kim, Ki-Jin</creatorcontrib><creatorcontrib>Park, Changkun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless technology letters (Print)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Sunju</au><au>Jang, Seongjin</au><au>Lee, Jaeyong</au><au>Jeong, Hayeon</au><au>Kim, Ki-Jin</au><au>Park, Changkun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications</atitle><jtitle>IEEE microwave and wireless technology letters (Print)</jtitle><stitle>LMWT</stitle><date>2023-06</date><risdate>2023</risdate><volume>33</volume><issue>6</issue><spage>743</spage><epage>746</epage><pages>743-746</pages><issn>2771-957X</issn><eissn>2771-9588</eissn><coden>IMWTAZ</coden><abstract><![CDATA[We designed a 6-bit Ka-band gallium nitride (GaN) phase shifter (PS). A low-pass <inline-formula> <tex-math notation="LaTeX">T </tex-math></inline-formula>-type network was adopted for all bits constituting the PS to suppress the increase in size. The bandwidth of the entire PS was determined by the bandwidth of 90° and 180° bits. Instead, bits lower than 90° bit were designed to suppress loss as much as possible within a range that does not affect the entire bandwidth. To this end, the size of the series transistors constituting the low bits was increased to reduce the ON-resistance. Furthermore, the increased parasitic capacitance of the transistor reduced the required inductance, further reducing the area. The PS was designed using the 150-nm GaN HEMT process. The core size was <inline-formula> <tex-math notation="LaTeX">3.65\times0.79 </tex-math></inline-formula> mm2. At the frequency ranges of 36-39 GHz, the insertion loss and rms magnitude error were measured to be lower than 8.68 and 0.62 dB, respectively.]]></abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/LMWT.2023.3237627</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4794-0062</orcidid><orcidid>https://orcid.org/0000-0002-4699-9935</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2771-957X |
| ispartof | IEEE microwave and wireless technology letters (Print), 2023-06, Vol.33 (6), p.743-746 |
| issn | 2771-957X 2771-9588 |
| language | eng |
| recordid | cdi_proquest_journals_3092271479 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Bandwidths Beamforming Error analysis Extremely high frequencies Frequency ranges Gallium nitride gallium nitride (GaN) Gallium nitrides HEMT HEMTs High electron mobility transistors Inductance Insertion loss Logic gates Loss measurement Parasitics (electronics) phase shifter (PS) Phase shifters Transistors |
| title | Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T23%3A59%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ka-Band%20GaN%20HEMT%20Phase%20Shifter%20With%20T-Type%20Structure%20for%20Beamforming%20Applications&rft.jtitle=IEEE%20microwave%20and%20wireless%20technology%20letters%20(Print)&rft.au=Kim,%20Sunju&rft.date=2023-06&rft.volume=33&rft.issue=6&rft.spage=743&rft.epage=746&rft.pages=743-746&rft.issn=2771-957X&rft.eissn=2771-9588&rft.coden=IMWTAZ&rft_id=info:doi/10.1109/LMWT.2023.3237627&rft_dat=%3Cproquest_RIE%3E3092271479%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3092271479&rft_id=info:pmid/&rft_ieee_id=10025368&rfr_iscdi=true |