N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz

A stack of TiN/Ru was employed as the Schottky gate metal for a nitrogen-polar deep-recess GaN high electron mobility transistor (HEMT) on a sapphire substrate. TiN/Ru Schottky diodes fabricated on the same HEMT epitaxy demonstrated a 6\times reduction in reverse-bias leakage current compared to R...

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