Design and Analysis of a High Linearity Full Ka -Band Stacked-FET Power Amplifier Using 0.15- µ m GaAs pHEMT Process

This letter presents the design and measured performance of a full Ka-band stacked-FET power amplifier (PA) fabricated using the 0.15-[Formula Omitted] Gallium arsenide (GaAs) pHEMT process. A stacked FET configuration is adopted in the power stage of the PA to achieve wideband power performance and...

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Veröffentlicht in:	IEEE microwave and wireless technology letters (Print) 2024-04, Vol.34 (4), p.427-430
Hauptverfasser:	Hsieh, Yun-Che, Lin, Guan-Jhih, Tsai, Zuo-Min, Chen, Tzu-Hung
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Configuration management Extremely high frequencies Gallium arsenide Linearity Power amplifiers
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