Exploring UV-Laser Effects on Al-Implanted 4H-SiC
In this paper, we explore the effects of excimer laser irradiation on heavily Aluminum (Al)-implanted silicon carbide (4H-SiC) layer. 4H-SiC layers were exposed to UV-laser radiation (308 nm, 160 ns), at different laser fluences and the effects of the laser exposure surface were evaluated from morph...
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| Veröffentlicht in: | Solid state phenomena 2023-05, Vol.342, p.85-89 |
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| container_title | Solid state phenomena |
| container_volume | 342 |
| creator | Bellocchi, Gabriele Rascunà, Simone Badalà, Paolo Vivona, Marilena Roccaforte, Fabrizio Agnello, Simonpietro Bongiorno, Corrado Bassi, Anna Di Franco, Salvatore Panasci, Salvatore Ethan Giannazzo, Filippo |
| description | In this paper, we explore the effects of excimer laser irradiation on heavily Aluminum (Al)-implanted silicon carbide (4H-SiC) layer. 4H-SiC layers were exposed to UV-laser radiation (308 nm, 160 ns), at different laser fluences and the effects of the laser exposure surface were evaluated from morphological, micro-structural and nano-electrical standpoints. Depending on the irradiation condition, significant near-surface changes were observed. Moreover, the electrical characteristics of the implanted layer, evaluated by means of transmission line method, gave a sheet-resistance of 1.62×104 kW/sq for the irradiated layer, linked to a poor activation of the p-type dopant and/or a low mobility of the carriers in the laser-modified 4H-SiC layer. This study can be useful for a fundamental understanding of laser annealing treatments of 4H-SiC implanted layers. |
| doi_str_mv | 10.4028/p-6jg806 |
| format | Article |
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Depending on the irradiation condition, significant near-surface changes were observed. Moreover, the electrical characteristics of the implanted layer, evaluated by means of transmission line method, gave a sheet-resistance of 1.62×104 kW/sq for the irradiated layer, linked to a poor activation of the p-type dopant and/or a low mobility of the carriers in the laser-modified 4H-SiC layer. 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Depending on the irradiation condition, significant near-surface changes were observed. Moreover, the electrical characteristics of the implanted layer, evaluated by means of transmission line method, gave a sheet-resistance of 1.62×104 kW/sq for the irradiated layer, linked to a poor activation of the p-type dopant and/or a low mobility of the carriers in the laser-modified 4H-SiC layer. 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| subjects | Excimer lasers Excimers Irradiation Laser beam annealing Silicon carbide Transmission lines |
| title | Exploring UV-Laser Effects on Al-Implanted 4H-SiC |
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