Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers

The recently introduced corona charge non-contact capacitance-voltage technique, CnCV, is analyzed considering the production needs of epitaxial SiC wafers. The interfering mechanism of charge dissipation on fresh epitaxial 4H-SiC is identified as surface diffusion and is effectively eliminated by o...

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Veröffentlicht in:	Solid state phenomena 2023-05, Vol.342, p.99-104
Hauptverfasser:	Sanchez, Edward, Wilson, Marshall, Gave, Matthew, Rana, Tawhid, Lagowski, Jacek, Savtchouk, Alexandre, Marinskiy, Dmitriy, Pushkarev, Vladimir
Format:	Artikel
Sprache:	eng
Schlagworte:	Defects Dopants Electric contacts Electric potential Epitaxy Silicon carbide Surface diffusion Voltage Wafers
Online-Zugang:	Volltext
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