High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas
In addition to silicon carbide (SiC) and gallium nitride (GaN), gallium oxide (Ga2O3) is attracting attention as a widegap semiconductor material. Ga2O3, unlike SiC and GaN, is not as hard, but has strong cleavage properties, making highly effective mechanical machining difficult. Thus, the processi...
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| Veröffentlicht in: | Solid state phenomena 2023-05, Vol.342, p.69-72 |
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| container_title | Solid state phenomena |
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| creator | Sano, Yasuhisa Nakaue, Genta Toh, Daisetsu Yamauchi, Kazuto Sai, Taiki |
| description | In addition to silicon carbide (SiC) and gallium nitride (GaN), gallium oxide (Ga2O3) is attracting attention as a widegap semiconductor material. Ga2O3, unlike SiC and GaN, is not as hard, but has strong cleavage properties, making highly effective mechanical machining difficult. Thus, the processing of Ga2O3 by high-speed etching employing atmospheric-pressure plasma was studied. An extremely high removal rate of 60 μm/min was obtained due to basic processing experiments using hydrogen gas instead of toxic and corrosive chlorine gas as the reaction gas. |
| doi_str_mv | 10.4028/p-2349e2 |
| format | Article |
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An extremely high removal rate of 60 μm/min was obtained due to basic processing experiments using hydrogen gas instead of toxic and corrosive chlorine gas as the reaction gas.</description><identifier>ISSN: 1012-0394</identifier><identifier>ISSN: 1662-9779</identifier><identifier>EISSN: 1662-9779</identifier><identifier>DOI: 10.4028/p-2349e2</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><subject>Chlorine ; Gallium nitrides ; Gallium oxides ; High speed ; Hydrogen ; Machining ; Plasma etching ; Semiconductor materials ; Silicon carbide ; Silicon substrates</subject><ispartof>Solid state phenomena, 2023-05, Vol.342, p.69-72</ispartof><rights>2023 Sano et al.</rights><rights>Copyright Trans Tech Publications Ltd. 2023</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2002-1c142f227e6fc3f597b35bc2261710e66c4ec89e2c6e7f5d3a4f4c7349ce3a983</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/6836?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sano, Yasuhisa</creatorcontrib><creatorcontrib>Nakaue, Genta</creatorcontrib><creatorcontrib>Toh, Daisetsu</creatorcontrib><creatorcontrib>Yamauchi, Kazuto</creatorcontrib><creatorcontrib>Sai, Taiki</creatorcontrib><title>High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas</title><title>Solid state phenomena</title><description>In addition to silicon carbide (SiC) and gallium nitride (GaN), gallium oxide (Ga2O3) is attracting attention as a widegap semiconductor material. 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| ispartof | Solid state phenomena, 2023-05, Vol.342, p.69-72 |
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| language | eng |
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| source | Scientific.net Journals |
| subjects | Chlorine Gallium nitrides Gallium oxides High speed Hydrogen Machining Plasma etching Semiconductor materials Silicon carbide Silicon substrates |
| title | High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas |
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