Kinetic Study on the Si3N4 Etching in Superheated Water

Wet etching of Si3N4 was conducted in superheated water at 160 °C with different additives type and concentration. In general, etching rate of Si3N4 increased with the pH of solution. However, it is difficult to fully explain the Si3N4 etching behavior just with the pH of solution. The OH- concentra...

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Veröffentlicht in:	Solid state phenomena 2021-02, Vol.314, p.113-118
Hauptverfasser:	Son, Changjin, Lim, Sang Woo
Format:	Artikel
Sprache:	eng
Schlagworte:	Etching Room temperature Silicon nitride
Online-Zugang:	Volltext
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