Kinetic Study on the Si3N4 Etching in Superheated Water

Kinetic Study on the Si3N4 Etching in Superheated Water

Wet etching of Si3N4 was conducted in superheated water at 160 °C with different additives type and concentration. In general, etching rate of Si3N4 increased with the pH of solution. However, it is difficult to fully explain the Si3N4 etching behavior just with the pH of solution. The OH- concentra...

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Veröffentlicht in:Solid state phenomena 2021-02, Vol.314, p.113-118
Hauptverfasser: Son, Changjin, Lim, Sang Woo
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Etching
Room temperature
Silicon nitride
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description Wet etching of Si3N4 was conducted in superheated water at 160 °C with different additives type and concentration. In general, etching rate of Si3N4 increased with the pH of solution. However, it is difficult to fully explain the Si3N4 etching behavior just with the pH of solution. The OH- concentration (or pH) in superheated water at 160 °C are different from the pH of solution at room temperature. Therefore, the OH- concentrations in superheated water at 160 °C were calculated using van't Hoff equation, equilibrium constant equations, mass and charge balance equations. The calculated OH- concentration at 160 °C showed better correlation with Si3N4 etching rate than that of initial pH of solution.
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Room temperature
Silicon nitride
title Kinetic Study on the Si3N4 Etching in Superheated Water
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