The Effect of a Single Off-Center Shallow Donor Atom on the Binding Energy and Diamagnetic Susceptibility in a GaAs Horn Torus Quantum Dot

In this work, we have studied an electron confined in a GaAs Horn torus quantum dot in the presence of a shallow donor impurity. Using the effective mass approximation and by considering an infinite confinement potential, the Schrödinger equation was calculated by the finite difference method. The e...

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Veröffentlicht in:Solid state phenomena 2023-09, Vol.349, p.133-144
Hauptverfasser: Chouef, Soufiane, Boussetta, Reda, Duque, Carlos Alberto, El-Miad, Abdelhamid Kerkour, Hbibi, Mohammed, Belamkadem, Laaziz, Chnafi, Mohamed, El Hadi, Mohamed, El Moussaouy, Abdelaaziz, Mommadi, O.
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container_end_page 144
container_issue
container_start_page 133
container_title Solid state phenomena
container_volume 349
creator Chouef, Soufiane
Boussetta, Reda
Duque, Carlos Alberto
El-Miad, Abdelhamid Kerkour
Hbibi, Mohammed
Belamkadem, Laaziz
Chnafi, Mohamed
El Hadi, Mohamed
El Moussaouy, Abdelaaziz
Mommadi, O.
description In this work, we have studied an electron confined in a GaAs Horn torus quantum dot in the presence of a shallow donor impurity. Using the effective mass approximation and by considering an infinite confinement potential, the Schrödinger equation was calculated by the finite difference method. The electron-impurity binding energy and the diamagnetic susceptibility are studied for different geometric sizes of the Horn torus. In addition, the effect of the radial and angular positions of the shallow donor impurity on the binding energy and the diamagnetic susceptibility are examined. The results show that the binding energy is much higher at small sizes of the nano system. Also, the diamagnetic susceptibility exhibits a symmetric behavior as a function of the angular position of the shallow impurity donor unlike that when the impurity moves radially. The influences of these parameter variants help us to better understand the effects of the size of the quantum dot and the position of the donor impurity, which improve the sensitive of the opto-electronic devices.
doi_str_mv 10.4028/p-BMi4VQ
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source Scientific.net Journals
subjects Angular position
Binding energy
Diamagnetism
Finite difference method
Impurities
Mathematical analysis
Optoelectronic devices
Parameter sensitivity
Quantum dots
Schrodinger equation
Toruses
title The Effect of a Single Off-Center Shallow Donor Atom on the Binding Energy and Diamagnetic Susceptibility in a GaAs Horn Torus Quantum Dot
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