Selective Si3N4 Etching for 3D NAND Integration by Using Low Concentration of H3PO4

This study investigated the etching kinetics of Si3N4 in various concentration of H3PO4 solution and the effect of Si3N4 etching enhancers on the etching process, particularly for 3D NAND trench structures. 30 wt% H3PO4 was used to etch Si3N4, which can produce higher Si3N4/SiO2 etching selectivity...

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Veröffentlicht in:	Solid state phenomena 2023-08, Vol.346, p.137-142
Hauptverfasser:	Han, Jong Won, Lim, Sang Woo, Park, Tae Gun
Format:	Artikel
Sprache:	eng
Schlagworte:	Etchants Etching Kinetics Selectivity Silicon dioxide Silicon nitride
Online-Zugang:	Volltext
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