Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction
The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the gr...
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| Veröffentlicht in: | Key engineering materials 2021-11, Vol.904, p.363-368 |
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| creator | Zhou, Xiao Yan Yin, Bang Sheng |
| description | The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.904.363 |
| format | Article |
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Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.</description><identifier>ISSN: 1013-9826</identifier><identifier>ISSN: 1662-9795</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.904.363</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><subject>Activation energy ; Aluminum ; Electrical properties ; Electrical resistivity ; Electron conductivity ; Equivalent circuits ; Grain boundaries ; Heterojunctions ; Impedance spectroscopy ; Low temperature ; Silicon dioxide ; Silicon substrates ; Spectroscopic analysis ; Spray pyrolysis ; Thermal conductivity ; Thin films ; Zinc oxide</subject><ispartof>Key engineering materials, 2021-11, Vol.904, p.363-368</ispartof><rights>2021 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2103-7334fece5abeea1366a3ac529a9aeaadc3aaca19d4b51131719de00e78c067153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/6253?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhou, Xiao Yan</creatorcontrib><creatorcontrib>Yin, Bang Sheng</creatorcontrib><title>Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction</title><title>Key engineering materials</title><description>The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. 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| subjects | Activation energy Aluminum Electrical properties Electrical resistivity Electron conductivity Equivalent circuits Grain boundaries Heterojunctions Impedance spectroscopy Low temperature Silicon dioxide Silicon substrates Spectroscopic analysis Spray pyrolysis Thermal conductivity Thin films Zinc oxide |
| title | Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction |
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