An Improved Nonlinear I‐V Model for GaN HEMTs

An Improved Nonlinear I‐V Model for GaN HEMTs

In this article, an improved nonlinear model for gallium nitride high‐electron‐mobility transistors (GaN HEMTs) is proposed. Aiming at the problem of insufficient accuracy of the nonlinear DC model caused by the self‐heating effect and trap effect in the traditional model, this thesis uses the Softp...

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Veröffentlicht in:International journal of RF and microwave computer-aided engineering 2024, Vol.2024 (1)
Hauptverfasser: Yuan, Qingyu, Zhang, Yixin, Luan, Xiaodong, Zhang, Jun, Xie, Chunxu, Cheng, Jiali
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Accuracy
Microwave communications
Transistors
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container_title International journal of RF and microwave computer-aided engineering
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creator Yuan, Qingyu
Zhang, Yixin
Luan, Xiaodong
Zhang, Jun
Xie, Chunxu
Cheng, Jiali
description In this article, an improved nonlinear model for gallium nitride high‐electron‐mobility transistors (GaN HEMTs) is proposed. Aiming at the problem of insufficient accuracy of the nonlinear DC model caused by the self‐heating effect and trap effect in the traditional model, this thesis uses the Softplus function to improve the traditional nonlinear DC model and establishes a nonlinear DC model including the self‐heating effect, which is verified by the three GaN HEMT devices of different sizes. The MSE of I ds is less than 2.44 × 10 −6 . The traditional empirical basis model needs to calculate the partial derivative of the current expression with respect to V ds , which is tedious and complicated. The proposed model can be directly used to fit the G m . The verification results show that the MSE of the G m is less than 1.07 × 10 −4 , which proves the effectiveness of the equation.
doi_str_mv 10.1155/2024/8834864
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Aiming at the problem of insufficient accuracy of the nonlinear DC model caused by the self‐heating effect and trap effect in the traditional model, this thesis uses the Softplus function to improve the traditional nonlinear DC model and establishes a nonlinear DC model including the self‐heating effect, which is verified by the three GaN HEMT devices of different sizes. The MSE of I ds is less than 2.44 × 10 −6 . The traditional empirical basis model needs to calculate the partial derivative of the current expression with respect to V ds , which is tedious and complicated. The proposed model can be directly used to fit the G m . 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subjects Accuracy
Microwave communications
Transistors
title An Improved Nonlinear I‐V Model for GaN HEMTs
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