Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

This Letter reports a highly scaled 90 nm gate length β-Ga2O3 (Ga2O3) T-gate MOSFET with a power gain cutoff frequency (fMAX) of 55 GHz. The 60 nm thin epitaxial Ga2O3 channel layer was grown by molecular beam epitaxy, while the highly doped (n++) source/drain regions were regrown using metal organi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2024-08, Vol.125 (6)
Hauptverfasser:	Saha, Chinmoy Nath, Vaidya, Abhishek, Nipu, Noor Jahan, Meng, Lingyu, Yu, Dong Su, Zhao, Hongping, Singisetti, Uttam
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Epitaxial growth Figure of merit Gallium oxides Metalorganic chemical vapor deposition Molecular beam epitaxy MOSFETs Organic chemicals Organic chemistry Power gain Superhigh frequencies Transconductance
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!