On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls
In this study, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and comprehensively characterized. In the arcuate Fin-HEMTs, where the sidewalls arcuate from the source to the drain side, enhancements in the drain current density and transconductance were observed....
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| Veröffentlicht in: | Applied physics letters 2024-08, Vol.125 (6) |
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| container_title | Applied physics letters |
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| creator | Chen, Yi-Lin Zhu, Qing Zhang, Meng Mi, Min-Han Zhu, Jie-Jie Guo, Si-Yin Zhou, Yu-Wei Wang, Peng-Fei Gong, Can Zhao, Zi-Yue Ma, Xiao-Hua |
| description | In this study, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and comprehensively characterized. In the arcuate Fin-HEMTs, where the sidewalls arcuate from the source to the drain side, enhancements in the drain current density and transconductance were observed. By extracting and analyzing parameters obtained from small-signal measurements and conducting an analysis of gate capacitance, it was demonstrated that the enhancement can be attributed to the modulation of gate capacitance. This enhances the control capability of the gate over channel carriers, resulting in increased transconductance of the device. Due to the enhanced transconductance, the fT and fmax of the arcuate Fin-HEMTs are both enhanced. Notably, the arcuate Fin-HEMTs achieved a power-added efficiency of 71.4% at a frequency of 3.6 GHz and a drain voltage of 20 V. Meanwhile, the linearity of the arcuate Fin-HEMTs is improved compared with the conventional Fin-HEMTs. |
| doi_str_mv | 10.1063/5.0209130 |
| format | Article |
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In the arcuate Fin-HEMTs, where the sidewalls arcuate from the source to the drain side, enhancements in the drain current density and transconductance were observed. By extracting and analyzing parameters obtained from small-signal measurements and conducting an analysis of gate capacitance, it was demonstrated that the enhancement can be attributed to the modulation of gate capacitance. This enhances the control capability of the gate over channel carriers, resulting in increased transconductance of the device. Due to the enhanced transconductance, the fT and fmax of the arcuate Fin-HEMTs are both enhanced. Notably, the arcuate Fin-HEMTs achieved a power-added efficiency of 71.4% at a frequency of 3.6 GHz and a drain voltage of 20 V. Meanwhile, the linearity of the arcuate Fin-HEMTs is improved compared with the conventional Fin-HEMTs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0209130</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Capacitance ; Gallium nitrides ; High electron mobility transistors ; Nanochannels ; Parameters ; Transconductance</subject><ispartof>Applied physics letters, 2024-08, Vol.125 (6)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). 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Meanwhile, the linearity of the arcuate Fin-HEMTs is improved compared with the conventional Fin-HEMTs.</description><subject>Aluminum gallium nitrides</subject><subject>Capacitance</subject><subject>Gallium nitrides</subject><subject>High electron mobility transistors</subject><subject>Nanochannels</subject><subject>Parameters</subject><subject>Transconductance</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsHv0HAk8K2yc5mszmW0j9CtSD1HNLdiW7ZZmuyi_Tbm9KePQyPgd-beTxCHjkbcZbDWIxYyhQHdkUGnEmZAOfFNRkwxiDJleC35C6EXVxFCjAgH2uXhM50SA_obev3xpVI0X2fdI-uo62lk2Zh3sdx6Lx2yXL2tgl0e6R9qN0XNb7sT_5QV_hrmibckxtrmoAPFx2Sz_lsM10mq_XidTpZJSUv0i6GSUurmEIhVJZLGwPKyso8FRVaRFVlKRRllmZiq2SFBoysAAzmBgVCsYUheTrfPfj2p8fQ6V3bexdfamBFUYCETETq-UyVvg3Bo9UHX--NP2rO9KkyLfSlssi-nNlQ1rGTunX_wH8BtGm7</recordid><startdate>20240805</startdate><enddate>20240805</enddate><creator>Chen, Yi-Lin</creator><creator>Zhu, Qing</creator><creator>Zhang, Meng</creator><creator>Mi, Min-Han</creator><creator>Zhu, Jie-Jie</creator><creator>Guo, Si-Yin</creator><creator>Zhou, Yu-Wei</creator><creator>Wang, Peng-Fei</creator><creator>Gong, Can</creator><creator>Zhao, Zi-Yue</creator><creator>Ma, Xiao-Hua</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6569-7270</orcidid><orcidid>https://orcid.org/0000-0002-5436-2221</orcidid><orcidid>https://orcid.org/0000-0002-3929-7150</orcidid><orcidid>https://orcid.org/0000-0002-4638-5239</orcidid><orcidid>https://orcid.org/0000-0003-1650-859X</orcidid><orcidid>https://orcid.org/0000-0001-8827-1398</orcidid><orcidid>https://orcid.org/0000-0003-4435-839X</orcidid></search><sort><creationdate>20240805</creationdate><title>On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls</title><author>Chen, Yi-Lin ; Zhu, Qing ; Zhang, Meng ; Mi, Min-Han ; Zhu, Jie-Jie ; Guo, Si-Yin ; Zhou, Yu-Wei ; Wang, Peng-Fei ; Gong, Can ; Zhao, Zi-Yue ; Ma, Xiao-Hua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c182t-692cf909e559467f0037df7625defee9d4238c4245b97dea3a7d33ae6ae5e38b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum gallium nitrides</topic><topic>Capacitance</topic><topic>Gallium nitrides</topic><topic>High electron mobility transistors</topic><topic>Nanochannels</topic><topic>Parameters</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yi-Lin</creatorcontrib><creatorcontrib>Zhu, Qing</creatorcontrib><creatorcontrib>Zhang, Meng</creatorcontrib><creatorcontrib>Mi, Min-Han</creatorcontrib><creatorcontrib>Zhu, Jie-Jie</creatorcontrib><creatorcontrib>Guo, Si-Yin</creatorcontrib><creatorcontrib>Zhou, Yu-Wei</creatorcontrib><creatorcontrib>Wang, Peng-Fei</creatorcontrib><creatorcontrib>Gong, Can</creatorcontrib><creatorcontrib>Zhao, Zi-Yue</creatorcontrib><creatorcontrib>Ma, Xiao-Hua</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Yi-Lin</au><au>Zhu, Qing</au><au>Zhang, Meng</au><au>Mi, Min-Han</au><au>Zhu, Jie-Jie</au><au>Guo, Si-Yin</au><au>Zhou, Yu-Wei</au><au>Wang, Peng-Fei</au><au>Gong, Can</au><au>Zhao, Zi-Yue</au><au>Ma, Xiao-Hua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls</atitle><jtitle>Applied physics letters</jtitle><date>2024-08-05</date><risdate>2024</risdate><volume>125</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this study, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and comprehensively characterized. In the arcuate Fin-HEMTs, where the sidewalls arcuate from the source to the drain side, enhancements in the drain current density and transconductance were observed. By extracting and analyzing parameters obtained from small-signal measurements and conducting an analysis of gate capacitance, it was demonstrated that the enhancement can be attributed to the modulation of gate capacitance. This enhances the control capability of the gate over channel carriers, resulting in increased transconductance of the device. Due to the enhanced transconductance, the fT and fmax of the arcuate Fin-HEMTs are both enhanced. Notably, the arcuate Fin-HEMTs achieved a power-added efficiency of 71.4% at a frequency of 3.6 GHz and a drain voltage of 20 V. Meanwhile, the linearity of the arcuate Fin-HEMTs is improved compared with the conventional Fin-HEMTs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0209130</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-6569-7270</orcidid><orcidid>https://orcid.org/0000-0002-5436-2221</orcidid><orcidid>https://orcid.org/0000-0002-3929-7150</orcidid><orcidid>https://orcid.org/0000-0002-4638-5239</orcidid><orcidid>https://orcid.org/0000-0003-1650-859X</orcidid><orcidid>https://orcid.org/0000-0001-8827-1398</orcidid><orcidid>https://orcid.org/0000-0003-4435-839X</orcidid></addata></record> |
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| subjects | Aluminum gallium nitrides Capacitance Gallium nitrides High electron mobility transistors Nanochannels Parameters Transconductance |
| title | On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls |
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