Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films
Advances in solar cell technology require improving the relevant physical properties of the constituent materials. One important functionality in photovoltaic devices is the efficient charge transport through the cell. Copper-doped zinc telluride (ZnTe:Cu) has been used as contact to cadmium telluri...
Gespeichert in:
Veröffentlicht in: | Journal of materials science. Materials in electronics 2024-08, Vol.35 (22), p.1500, Article 1500 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 22 |
container_start_page | 1500 |
container_title | Journal of materials science. Materials in electronics |
container_volume | 35 |
creator | Alvarez, M. A. Gomez Calderón-Martínez, A. I. Rodríguez-Melgarejo, F. Hernández-Landaverde, M. A. Meléndez-Lira, M. Flores-Ruiz, F. J. Sandoval, S. Jiménez |
description | Advances in solar cell technology require improving the relevant physical properties of the constituent materials. One important functionality in photovoltaic devices is the efficient charge transport through the cell. Copper-doped zinc telluride (ZnTe:Cu) has been used as contact to cadmium telluride, the light-absorbing layer in photovoltaic devices. Out of the various deposition techniques, radio frequency sputtering is one of the most versatile and widely employed in research laboratories and industry. In this work, is presented a thorough characterization of ZnTe and ZnTe:Cu films grown by sputtering as a function of substrate temperature (T
s
= 300 and 350 °C) and copper concentration (1, 3 and 5 at%). Besides the structural (X-ray diffraction), optical (UV-Vis spectroscopy) and electrical (Hall effect) characterizations, the present study included other studies relevant for optoelectronic applications such as photoluminescence, photoconductivity (under constant or transient illumination) and, in order to determine the effect of copper on the work function, Kelvin probe force microscopy was applied to the samples. Our results show important improvements in crystallite size, conductivity and photoconducting properties derived from the incorporation of copper in the ZnTe lattice. |
doi_str_mv | 10.1007/s10854-024-13267-z |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3087031893</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3087031893</sourcerecordid><originalsourceid>FETCH-LOGICAL-c244t-e246271f6f70dc0ece338a628ee6fb51c0d47533a0817f19aa8a9f3799d64f2e3</originalsourceid><addsrcrecordid>eNp9UEtLAzEQDqJgrf4BTwGvrua1m6w3KfUBBS8VxEuI2Um7pd2sSfZg_4H_2rQVvHkaZuZ7zHwIXVJyQwmRt5ESVYqCMFFQzipZbI_QiJaSF0Kxt2M0InUpC1EydorOYlwRQirB1Qh9T50DmyL2Dqcl4LazPvQ-mNT6bje0vu8h4Nzs1pvWBo9jCoNNQ4BrbJcmLACnYLqYaQmbrsH90icP66wbWmvWuA8-a6QW9jaxH1KCAA1-7-ZwNxmwa9ebeI5OnFlHuPitY_T6MJ1PnorZy-Pz5H5WWCZEKoCJiknqKidJYwlY4FyZiimAyn2U1JJGyJJzQxSVjtbGKFM7Luu6qYRjwMfo6qCbr_ocICa98kPosqXmREnCqap5RrEDKv8bYwCn-9BuTPjSlOhd5PoQuc6R633keptJ_ECKGdwtIPxJ_8P6AS-Fh-M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3087031893</pqid></control><display><type>article</type><title>Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films</title><source>SpringerLink (Online service)</source><creator>Alvarez, M. A. Gomez ; Calderón-Martínez, A. I. ; Rodríguez-Melgarejo, F. ; Hernández-Landaverde, M. A. ; Meléndez-Lira, M. ; Flores-Ruiz, F. J. ; Sandoval, S. Jiménez</creator><creatorcontrib>Alvarez, M. A. Gomez ; Calderón-Martínez, A. I. ; Rodríguez-Melgarejo, F. ; Hernández-Landaverde, M. A. ; Meléndez-Lira, M. ; Flores-Ruiz, F. J. ; Sandoval, S. Jiménez</creatorcontrib><description>Advances in solar cell technology require improving the relevant physical properties of the constituent materials. One important functionality in photovoltaic devices is the efficient charge transport through the cell. Copper-doped zinc telluride (ZnTe:Cu) has been used as contact to cadmium telluride, the light-absorbing layer in photovoltaic devices. Out of the various deposition techniques, radio frequency sputtering is one of the most versatile and widely employed in research laboratories and industry. In this work, is presented a thorough characterization of ZnTe and ZnTe:Cu films grown by sputtering as a function of substrate temperature (T
s
= 300 and 350 °C) and copper concentration (1, 3 and 5 at%). Besides the structural (X-ray diffraction), optical (UV-Vis spectroscopy) and electrical (Hall effect) characterizations, the present study included other studies relevant for optoelectronic applications such as photoluminescence, photoconductivity (under constant or transient illumination) and, in order to determine the effect of copper on the work function, Kelvin probe force microscopy was applied to the samples. Our results show important improvements in crystallite size, conductivity and photoconducting properties derived from the incorporation of copper in the ZnTe lattice.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-13267-z</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Cadmium tellurides ; Characterization and Evaluation of Materials ; Charge materials ; Charge transport ; Chemistry and Materials Science ; Copper ; Crystallites ; Electric contacts ; Electromagnetic absorption ; Hall effect ; Intermetallic compounds ; Laboratories ; Materials Science ; Metal films ; Optical and Electronic Materials ; Optoelectronics ; Photoconductivity ; Photoelectricity ; Photoluminescence ; Photovoltaic cells ; Physical properties ; Solar cells ; Sputtering ; Substrates ; Work functions ; Zinc telluride ; Zinc tellurides</subject><ispartof>Journal of materials science. Materials in electronics, 2024-08, Vol.35 (22), p.1500, Article 1500</ispartof><rights>The Author(s) 2024</rights><rights>The Author(s) 2024. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c244t-e246271f6f70dc0ece338a628ee6fb51c0d47533a0817f19aa8a9f3799d64f2e3</cites><orcidid>0000-0002-2143-3759</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-024-13267-z$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-024-13267-z$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Alvarez, M. A. Gomez</creatorcontrib><creatorcontrib>Calderón-Martínez, A. I.</creatorcontrib><creatorcontrib>Rodríguez-Melgarejo, F.</creatorcontrib><creatorcontrib>Hernández-Landaverde, M. A.</creatorcontrib><creatorcontrib>Meléndez-Lira, M.</creatorcontrib><creatorcontrib>Flores-Ruiz, F. J.</creatorcontrib><creatorcontrib>Sandoval, S. Jiménez</creatorcontrib><title>Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Advances in solar cell technology require improving the relevant physical properties of the constituent materials. One important functionality in photovoltaic devices is the efficient charge transport through the cell. Copper-doped zinc telluride (ZnTe:Cu) has been used as contact to cadmium telluride, the light-absorbing layer in photovoltaic devices. Out of the various deposition techniques, radio frequency sputtering is one of the most versatile and widely employed in research laboratories and industry. In this work, is presented a thorough characterization of ZnTe and ZnTe:Cu films grown by sputtering as a function of substrate temperature (T
s
= 300 and 350 °C) and copper concentration (1, 3 and 5 at%). Besides the structural (X-ray diffraction), optical (UV-Vis spectroscopy) and electrical (Hall effect) characterizations, the present study included other studies relevant for optoelectronic applications such as photoluminescence, photoconductivity (under constant or transient illumination) and, in order to determine the effect of copper on the work function, Kelvin probe force microscopy was applied to the samples. Our results show important improvements in crystallite size, conductivity and photoconducting properties derived from the incorporation of copper in the ZnTe lattice.</description><subject>Cadmium tellurides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Charge materials</subject><subject>Charge transport</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Crystallites</subject><subject>Electric contacts</subject><subject>Electromagnetic absorption</subject><subject>Hall effect</subject><subject>Intermetallic compounds</subject><subject>Laboratories</subject><subject>Materials Science</subject><subject>Metal films</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronics</subject><subject>Photoconductivity</subject><subject>Photoelectricity</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Physical properties</subject><subject>Solar cells</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Work functions</subject><subject>Zinc telluride</subject><subject>Zinc tellurides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9UEtLAzEQDqJgrf4BTwGvrua1m6w3KfUBBS8VxEuI2Um7pd2sSfZg_4H_2rQVvHkaZuZ7zHwIXVJyQwmRt5ESVYqCMFFQzipZbI_QiJaSF0Kxt2M0InUpC1EydorOYlwRQirB1Qh9T50DmyL2Dqcl4LazPvQ-mNT6bje0vu8h4Nzs1pvWBo9jCoNNQ4BrbJcmLACnYLqYaQmbrsH90icP66wbWmvWuA8-a6QW9jaxH1KCAA1-7-ZwNxmwa9ebeI5OnFlHuPitY_T6MJ1PnorZy-Pz5H5WWCZEKoCJiknqKidJYwlY4FyZiimAyn2U1JJGyJJzQxSVjtbGKFM7Luu6qYRjwMfo6qCbr_ocICa98kPosqXmREnCqap5RrEDKv8bYwCn-9BuTPjSlOhd5PoQuc6R633keptJ_ECKGdwtIPxJ_8P6AS-Fh-M</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>Alvarez, M. A. Gomez</creator><creator>Calderón-Martínez, A. I.</creator><creator>Rodríguez-Melgarejo, F.</creator><creator>Hernández-Landaverde, M. A.</creator><creator>Meléndez-Lira, M.</creator><creator>Flores-Ruiz, F. J.</creator><creator>Sandoval, S. Jiménez</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2143-3759</orcidid></search><sort><creationdate>20240801</creationdate><title>Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films</title><author>Alvarez, M. A. Gomez ; Calderón-Martínez, A. I. ; Rodríguez-Melgarejo, F. ; Hernández-Landaverde, M. A. ; Meléndez-Lira, M. ; Flores-Ruiz, F. J. ; Sandoval, S. Jiménez</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c244t-e246271f6f70dc0ece338a628ee6fb51c0d47533a0817f19aa8a9f3799d64f2e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Cadmium tellurides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Charge materials</topic><topic>Charge transport</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Crystallites</topic><topic>Electric contacts</topic><topic>Electromagnetic absorption</topic><topic>Hall effect</topic><topic>Intermetallic compounds</topic><topic>Laboratories</topic><topic>Materials Science</topic><topic>Metal films</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronics</topic><topic>Photoconductivity</topic><topic>Photoelectricity</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Physical properties</topic><topic>Solar cells</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>Work functions</topic><topic>Zinc telluride</topic><topic>Zinc tellurides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alvarez, M. A. Gomez</creatorcontrib><creatorcontrib>Calderón-Martínez, A. I.</creatorcontrib><creatorcontrib>Rodríguez-Melgarejo, F.</creatorcontrib><creatorcontrib>Hernández-Landaverde, M. A.</creatorcontrib><creatorcontrib>Meléndez-Lira, M.</creatorcontrib><creatorcontrib>Flores-Ruiz, F. J.</creatorcontrib><creatorcontrib>Sandoval, S. Jiménez</creatorcontrib><collection>Springer Open Access</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alvarez, M. A. Gomez</au><au>Calderón-Martínez, A. I.</au><au>Rodríguez-Melgarejo, F.</au><au>Hernández-Landaverde, M. A.</au><au>Meléndez-Lira, M.</au><au>Flores-Ruiz, F. J.</au><au>Sandoval, S. Jiménez</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-08-01</date><risdate>2024</risdate><volume>35</volume><issue>22</issue><spage>1500</spage><pages>1500-</pages><artnum>1500</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Advances in solar cell technology require improving the relevant physical properties of the constituent materials. One important functionality in photovoltaic devices is the efficient charge transport through the cell. Copper-doped zinc telluride (ZnTe:Cu) has been used as contact to cadmium telluride, the light-absorbing layer in photovoltaic devices. Out of the various deposition techniques, radio frequency sputtering is one of the most versatile and widely employed in research laboratories and industry. In this work, is presented a thorough characterization of ZnTe and ZnTe:Cu films grown by sputtering as a function of substrate temperature (T
s
= 300 and 350 °C) and copper concentration (1, 3 and 5 at%). Besides the structural (X-ray diffraction), optical (UV-Vis spectroscopy) and electrical (Hall effect) characterizations, the present study included other studies relevant for optoelectronic applications such as photoluminescence, photoconductivity (under constant or transient illumination) and, in order to determine the effect of copper on the work function, Kelvin probe force microscopy was applied to the samples. Our results show important improvements in crystallite size, conductivity and photoconducting properties derived from the incorporation of copper in the ZnTe lattice.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-13267-z</doi><orcidid>https://orcid.org/0000-0002-2143-3759</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0957-4522 |
ispartof | Journal of materials science. Materials in electronics, 2024-08, Vol.35 (22), p.1500, Article 1500 |
issn | 0957-4522 1573-482X |
language | eng |
recordid | cdi_proquest_journals_3087031893 |
source | SpringerLink (Online service) |
subjects | Cadmium tellurides Characterization and Evaluation of Materials Charge materials Charge transport Chemistry and Materials Science Copper Crystallites Electric contacts Electromagnetic absorption Hall effect Intermetallic compounds Laboratories Materials Science Metal films Optical and Electronic Materials Optoelectronics Photoconductivity Photoelectricity Photoluminescence Photovoltaic cells Physical properties Solar cells Sputtering Substrates Work functions Zinc telluride Zinc tellurides |
title | Effects of the incorporation of copper on the micro structure, charge transport and photoelectrical properties of sputtered ZnTe:Cu films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T16%3A38%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20the%20incorporation%20of%20copper%20on%20the%20micro%20structure,%20charge%20transport%20and%20photoelectrical%20properties%20of%20sputtered%20ZnTe:Cu%20films&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Alvarez,%20M.%20A.%20Gomez&rft.date=2024-08-01&rft.volume=35&rft.issue=22&rft.spage=1500&rft.pages=1500-&rft.artnum=1500&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-024-13267-z&rft_dat=%3Cproquest_cross%3E3087031893%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3087031893&rft_id=info:pmid/&rfr_iscdi=true |