22‐3: Negative Capacitance ZAO/ZnO Ferroelectric Thin‐Film Transistor for Neuromorphic Computing

We report complementary metal‐oxide semiconductor (CMOS)‐compatible, negative capacitance (NC) ferroelectric (FE) zirconium‐aluminum oxide (ZAO)/ZnO thin‐film transistors (TFTs) at a low thermal budget of 360 °C. The NC‐FE‐TFTs demonstrate uniform device‐to‐device performances, featuring a high memo...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.280-283
Hauptverfasser:	Islam, Md Mobaidul, Jeong, Myeonggi, Ali, Arqum, Bae, Jinbaek, Roy, Samiran, Jang, Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Capacitance Ferroelectric materials ferroelectric thin‐film transistor (FE‐TFT) Ferroelectricity negative capacitance (NC) negative differential resistance (NDR) Neuromorphic computing Room temperature Semiconductor devices synaptic weight Thin film transistors Zinc oxide zirconium‐aluminum‐oxide (ZAO)
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