9‐1: Invited/Distinguished Paper: Flexible TFT Backplane Development for Extremely Small Bending Radius with Organic ILD and Island TFT Structure
A new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) backplane on PI substrate with organic dielectric layer and low‐stress structure of island TFT is proposed. This new extremely low stress backplane is able to withstand 20,000 inward bending cycles at a bending...
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Veröffentlicht in: | SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.72-75 |
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creator | Kim, Taewoong Seol, Younggug Lee, Sunhee Choi, Jinhwan Lee, Jinwoo Kim, Jintaek Lee, Pilsuk Park, Juchan Park, Boik Nguyen Thanh, Tien Kim, Kihyun Kim, Yongjo Lee, Changhee |
description | A new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) backplane on PI substrate with organic dielectric layer and low‐stress structure of island TFT is proposed. This new extremely low stress backplane is able to withstand 20,000 inward bending cycles at a bending radius of 1mm without any noticeable TFT degradation. After 200,000 bending inward cycles at bending radius of 1 mm, the stability test results show that the change of on‐current is 10.07% for hot carrier instability (HCI) test, the change of threshold voltage ‐0.31V for negative bias thermal instability (NBTI) test, the change of threshold voltage ‐0.24V for hysteresis test, and the breakdown voltage of gate insulator 7.73MV/cm, respectively. The AMOLED display panel manufacured with organic ILD does not show any visible degradation of panel image just after 200K rolling at rolling radius of 4mm or 200K folding at folding radius of 1mm. |
doi_str_mv | 10.1002/sdtp.17456 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3085963536</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3085963536</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1056-5043b32785c6d4d09a8970739d69c8b16619a039a477e57be8ec249a799cb2d23</originalsourceid><addsrcrecordid>eNp9kM1KAzEURoMoWH82PkHAnTCaTGaSiTu1rRYKiq3gbsgktxpNZ8Yko3bnIwi-oU9ia127-jbnngsHoQNKjikh6UkwsT2mIsv5BuqllBcJobncRD1CpEgk5_fbaCeEJ0IYyzLZQ1_y--OTnuJR_WojmJO-DdHWD50Nj2DwjWrBn-Khg3dbOcDT4RSfK_3cOlUD7sMruKadQx3xrPF48B49zMEt8GSunMPnUJulC98qY7uA32x8xNf-QdVW49G4j1Vt8Ci41azEk-g7HTsPe2hrplyA_b_dRXfDwfTiKhlfX44uzsaJpiTnSU4yVrFUFLnmJjNEqkIKIpg0XOqiopxTqQiTKhMCclFBATrNpBJS6io1KdtFh2tv65uXDkIsn5rO18uXJSNFLjnLGV9SR2tK-yYED7Oy9Xau_KKkpFxFL1fRy9_oS5iu4TfrYPEPWU7605v1zQ_5y4Ub</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3085963536</pqid></control><display><type>article</type><title>9‐1: Invited/Distinguished Paper: Flexible TFT Backplane Development for Extremely Small Bending Radius with Organic ILD and Island TFT Structure</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Kim, Taewoong ; Seol, Younggug ; Lee, Sunhee ; Choi, Jinhwan ; Lee, Jinwoo ; Kim, Jintaek ; Lee, Pilsuk ; Park, Juchan ; Park, Boik ; Nguyen Thanh, Tien ; Kim, Kihyun ; Kim, Yongjo ; Lee, Changhee</creator><creatorcontrib>Kim, Taewoong ; Seol, Younggug ; Lee, Sunhee ; Choi, Jinhwan ; Lee, Jinwoo ; Kim, Jintaek ; Lee, Pilsuk ; Park, Juchan ; Park, Boik ; Nguyen Thanh, Tien ; Kim, Kihyun ; Kim, Yongjo ; Lee, Changhee</creatorcontrib><description>A new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) backplane on PI substrate with organic dielectric layer and low‐stress structure of island TFT is proposed. This new extremely low stress backplane is able to withstand 20,000 inward bending cycles at a bending radius of 1mm without any noticeable TFT degradation. After 200,000 bending inward cycles at bending radius of 1 mm, the stability test results show that the change of on‐current is 10.07% for hot carrier instability (HCI) test, the change of threshold voltage ‐0.31V for negative bias thermal instability (NBTI) test, the change of threshold voltage ‐0.24V for hysteresis test, and the breakdown voltage of gate insulator 7.73MV/cm, respectively. The AMOLED display panel manufacured with organic ILD does not show any visible degradation of panel image just after 200K rolling at rolling radius of 4mm or 200K folding at folding radius of 1mm.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.17456</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Active matrix displays ; Backplanes ; Bend radius ; Bend tests ; Current carriers ; Flexieble ; Folding ; Image degradation ; Island TFT Structure ; Organic ILD ; Organic light emitting diodes ; Polysilicon ; Rollable ; Semiconductor devices ; Silicon films ; Silicon substrates ; Stability tests ; Thermal instability ; Thin film transistors ; Threshold voltage</subject><ispartof>SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.72-75</ispartof><rights>2024 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1056-5043b32785c6d4d09a8970739d69c8b16619a039a477e57be8ec249a799cb2d23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.17456$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.17456$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Kim, Taewoong</creatorcontrib><creatorcontrib>Seol, Younggug</creatorcontrib><creatorcontrib>Lee, Sunhee</creatorcontrib><creatorcontrib>Choi, Jinhwan</creatorcontrib><creatorcontrib>Lee, Jinwoo</creatorcontrib><creatorcontrib>Kim, Jintaek</creatorcontrib><creatorcontrib>Lee, Pilsuk</creatorcontrib><creatorcontrib>Park, Juchan</creatorcontrib><creatorcontrib>Park, Boik</creatorcontrib><creatorcontrib>Nguyen Thanh, Tien</creatorcontrib><creatorcontrib>Kim, Kihyun</creatorcontrib><creatorcontrib>Kim, Yongjo</creatorcontrib><creatorcontrib>Lee, Changhee</creatorcontrib><title>9‐1: Invited/Distinguished Paper: Flexible TFT Backplane Development for Extremely Small Bending Radius with Organic ILD and Island TFT Structure</title><title>SID International Symposium Digest of technical papers</title><description>A new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) backplane on PI substrate with organic dielectric layer and low‐stress structure of island TFT is proposed. This new extremely low stress backplane is able to withstand 20,000 inward bending cycles at a bending radius of 1mm without any noticeable TFT degradation. After 200,000 bending inward cycles at bending radius of 1 mm, the stability test results show that the change of on‐current is 10.07% for hot carrier instability (HCI) test, the change of threshold voltage ‐0.31V for negative bias thermal instability (NBTI) test, the change of threshold voltage ‐0.24V for hysteresis test, and the breakdown voltage of gate insulator 7.73MV/cm, respectively. The AMOLED display panel manufacured with organic ILD does not show any visible degradation of panel image just after 200K rolling at rolling radius of 4mm or 200K folding at folding radius of 1mm.</description><subject>Active matrix displays</subject><subject>Backplanes</subject><subject>Bend radius</subject><subject>Bend tests</subject><subject>Current carriers</subject><subject>Flexieble</subject><subject>Folding</subject><subject>Image degradation</subject><subject>Island TFT Structure</subject><subject>Organic ILD</subject><subject>Organic light emitting diodes</subject><subject>Polysilicon</subject><subject>Rollable</subject><subject>Semiconductor devices</subject><subject>Silicon films</subject><subject>Silicon substrates</subject><subject>Stability tests</subject><subject>Thermal instability</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEURoMoWH82PkHAnTCaTGaSiTu1rRYKiq3gbsgktxpNZ8Yko3bnIwi-oU9ia127-jbnngsHoQNKjikh6UkwsT2mIsv5BuqllBcJobncRD1CpEgk5_fbaCeEJ0IYyzLZQ1_y--OTnuJR_WojmJO-DdHWD50Nj2DwjWrBn-Khg3dbOcDT4RSfK_3cOlUD7sMruKadQx3xrPF48B49zMEt8GSunMPnUJulC98qY7uA32x8xNf-QdVW49G4j1Vt8Ci41azEk-g7HTsPe2hrplyA_b_dRXfDwfTiKhlfX44uzsaJpiTnSU4yVrFUFLnmJjNEqkIKIpg0XOqiopxTqQiTKhMCclFBATrNpBJS6io1KdtFh2tv65uXDkIsn5rO18uXJSNFLjnLGV9SR2tK-yYED7Oy9Xau_KKkpFxFL1fRy9_oS5iu4TfrYPEPWU7605v1zQ_5y4Ub</recordid><startdate>202406</startdate><enddate>202406</enddate><creator>Kim, Taewoong</creator><creator>Seol, Younggug</creator><creator>Lee, Sunhee</creator><creator>Choi, Jinhwan</creator><creator>Lee, Jinwoo</creator><creator>Kim, Jintaek</creator><creator>Lee, Pilsuk</creator><creator>Park, Juchan</creator><creator>Park, Boik</creator><creator>Nguyen Thanh, Tien</creator><creator>Kim, Kihyun</creator><creator>Kim, Yongjo</creator><creator>Lee, Changhee</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>202406</creationdate><title>9‐1: Invited/Distinguished Paper: Flexible TFT Backplane Development for Extremely Small Bending Radius with Organic ILD and Island TFT Structure</title><author>Kim, Taewoong ; Seol, Younggug ; Lee, Sunhee ; Choi, Jinhwan ; Lee, Jinwoo ; Kim, Jintaek ; Lee, Pilsuk ; Park, Juchan ; Park, Boik ; Nguyen Thanh, Tien ; Kim, Kihyun ; Kim, Yongjo ; Lee, Changhee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1056-5043b32785c6d4d09a8970739d69c8b16619a039a477e57be8ec249a799cb2d23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Active matrix displays</topic><topic>Backplanes</topic><topic>Bend radius</topic><topic>Bend tests</topic><topic>Current carriers</topic><topic>Flexieble</topic><topic>Folding</topic><topic>Image degradation</topic><topic>Island TFT Structure</topic><topic>Organic ILD</topic><topic>Organic light emitting diodes</topic><topic>Polysilicon</topic><topic>Rollable</topic><topic>Semiconductor devices</topic><topic>Silicon films</topic><topic>Silicon substrates</topic><topic>Stability tests</topic><topic>Thermal instability</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Taewoong</creatorcontrib><creatorcontrib>Seol, Younggug</creatorcontrib><creatorcontrib>Lee, Sunhee</creatorcontrib><creatorcontrib>Choi, Jinhwan</creatorcontrib><creatorcontrib>Lee, Jinwoo</creatorcontrib><creatorcontrib>Kim, Jintaek</creatorcontrib><creatorcontrib>Lee, Pilsuk</creatorcontrib><creatorcontrib>Park, Juchan</creatorcontrib><creatorcontrib>Park, Boik</creatorcontrib><creatorcontrib>Nguyen Thanh, Tien</creatorcontrib><creatorcontrib>Kim, Kihyun</creatorcontrib><creatorcontrib>Kim, Yongjo</creatorcontrib><creatorcontrib>Lee, Changhee</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Taewoong</au><au>Seol, Younggug</au><au>Lee, Sunhee</au><au>Choi, Jinhwan</au><au>Lee, Jinwoo</au><au>Kim, Jintaek</au><au>Lee, Pilsuk</au><au>Park, Juchan</au><au>Park, Boik</au><au>Nguyen Thanh, Tien</au><au>Kim, Kihyun</au><au>Kim, Yongjo</au><au>Lee, Changhee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>9‐1: Invited/Distinguished Paper: Flexible TFT Backplane Development for Extremely Small Bending Radius with Organic ILD and Island TFT Structure</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2024-06</date><risdate>2024</risdate><volume>55</volume><issue>1</issue><spage>72</spage><epage>75</epage><pages>72-75</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>A new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) backplane on PI substrate with organic dielectric layer and low‐stress structure of island TFT is proposed. This new extremely low stress backplane is able to withstand 20,000 inward bending cycles at a bending radius of 1mm without any noticeable TFT degradation. After 200,000 bending inward cycles at bending radius of 1 mm, the stability test results show that the change of on‐current is 10.07% for hot carrier instability (HCI) test, the change of threshold voltage ‐0.31V for negative bias thermal instability (NBTI) test, the change of threshold voltage ‐0.24V for hysteresis test, and the breakdown voltage of gate insulator 7.73MV/cm, respectively. The AMOLED display panel manufacured with organic ILD does not show any visible degradation of panel image just after 200K rolling at rolling radius of 4mm or 200K folding at folding radius of 1mm.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.17456</doi><tpages>4</tpages></addata></record> |
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subjects | Active matrix displays Backplanes Bend radius Bend tests Current carriers Flexieble Folding Image degradation Island TFT Structure Organic ILD Organic light emitting diodes Polysilicon Rollable Semiconductor devices Silicon films Silicon substrates Stability tests Thermal instability Thin film transistors Threshold voltage |
title | 9‐1: Invited/Distinguished Paper: Flexible TFT Backplane Development for Extremely Small Bending Radius with Organic ILD and Island TFT Structure |
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