Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel

The conditions for the growth of n -type Ge layers with the parameters required to create a Ge-MISFET with an induced p -type channel using the hot wire chemical vapor deposition (HW CVD) method are determined. The conditions for deposition using electron beam deposition and subsequent annealing of...

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Veröffentlicht in:	Russian microelectronics 2024-06, Vol.53 (3), p.197-201
Hauptverfasser:	Alyabina, N. A., Arkhipova, E. A., Buzynin, Yu. N., Denisov, S. A., Zdoroveishchev, A. V., Titova, A. M., Chalkov, V. Yu, Shengurov, V. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Electric potential Electrical Engineering Electron beams Engineering Leakage current Parameters Voltage Yttrium oxide Zirconium dioxide
Online-Zugang:	Volltext
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