Indium Bump Bonding: Advanced Integration Techniques for Low-Temperature Detectors and Readout
We have examined the influence of bump shape and bonding pressure on low-temperature electrical properties of indium bump connections including superconducting transition temperature, normal state resistance, and superconducting critical current. We describe our test structures, bonding process, and...
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Veröffentlicht in: | Journal of low temperature physics 2024-07, Vol.216 (1-2), p.67-72 |
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container_title | Journal of low temperature physics |
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creator | Lucas, T. J. Biesecker, J. P. Doriese, W. B. Duff, S. M. Durkin, M. S. Lew, R. A. Ullom, J. N. Vissers, M. R. Schmidt, D. R. |
description | We have examined the influence of bump shape and bonding pressure on low-temperature electrical properties of indium bump connections including superconducting transition temperature, normal state resistance, and superconducting critical current. We describe our test structures, bonding process, and methods of characterization. At temperatures below 1 K, we observe critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 µm × 17 µm. |
doi_str_mv | 10.1007/s10909-024-03104-2 |
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At temperatures below 1 K, we observe critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 µm × 17 µm.</description><subject>Bonding</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Critical current (superconductivity)</subject><subject>Electrical properties</subject><subject>Indium</subject><subject>Low temperature</subject><subject>Low temperature resistance</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Superconductivity</subject><subject>Transition temperature</subject><issn>0022-2291</issn><issn>1573-7357</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9kN1LwzAUxYMoOKf_gE8Bn6M3X23j2za_BgNB5qshbdLZYZOZtIr_vZ0VfPPpcrnnnHv4IXRO4ZIC5FeJggJFgAkCnIIg7ABNqMw5ybnMD9EEgDHCmKLH6CSlLQCoIuMT9LL0tulbPO_bHZ6HYfGbazyzH8ZXzuKl79wmmq4JHq9d9eqb994lXIeIV-GTrF27c8O5jw7fuM5VXYgJG2_xkzM29N0pOqrNW3Jnv3OKnu9u14sHsnq8Xy5mK1JxKjpCmSytoDUTRSGtsUaa0jAhXFnWFauykmVKKlVmNRSqzqTJuRHgcl4bECy3fIouxtxdDPuGnd6GPvrhpeZQSApcUjWo2KiqYkgpulrvYtOa-KUp6D1HPXLUA0f9w1GzwcRHUxrEfuPiX_Q_rm9QfXX9</recordid><startdate>20240701</startdate><enddate>20240701</enddate><creator>Lucas, T. 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B.</creatorcontrib><creatorcontrib>Duff, S. M.</creatorcontrib><creatorcontrib>Durkin, M. S.</creatorcontrib><creatorcontrib>Lew, R. A.</creatorcontrib><creatorcontrib>Ullom, J. N.</creatorcontrib><creatorcontrib>Vissers, M. R.</creatorcontrib><creatorcontrib>Schmidt, D. R.</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><jtitle>Journal of low temperature physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lucas, T. J.</au><au>Biesecker, J. P.</au><au>Doriese, W. B.</au><au>Duff, S. M.</au><au>Durkin, M. S.</au><au>Lew, R. A.</au><au>Ullom, J. N.</au><au>Vissers, M. R.</au><au>Schmidt, D. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Indium Bump Bonding: Advanced Integration Techniques for Low-Temperature Detectors and Readout</atitle><jtitle>Journal of low temperature physics</jtitle><stitle>J Low Temp Phys</stitle><date>2024-07-01</date><risdate>2024</risdate><volume>216</volume><issue>1-2</issue><spage>67</spage><epage>72</epage><pages>67-72</pages><issn>0022-2291</issn><eissn>1573-7357</eissn><abstract>We have examined the influence of bump shape and bonding pressure on low-temperature electrical properties of indium bump connections including superconducting transition temperature, normal state resistance, and superconducting critical current. We describe our test structures, bonding process, and methods of characterization. At temperatures below 1 K, we observe critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 µm × 17 µm.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10909-024-03104-2</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Bonding Characterization and Evaluation of Materials Condensed Matter Physics Critical current (superconductivity) Electrical properties Indium Low temperature Low temperature resistance Magnetic Materials Magnetism Physics Physics and Astronomy Superconductivity Transition temperature |
title | Indium Bump Bonding: Advanced Integration Techniques for Low-Temperature Detectors and Readout |
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