Multilayer Graphene/Epitaxial Silicon Near‐Infrared Self‐Quenched Avalanche Photodetectors

2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, and signal‐to‐noise ratio. These materials hold promise in addressing inherent technical challenges associated with APDs, such as low light absorptio...

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Veröffentlicht in:	Advanced optical materials 2024-07, Vol.12 (21), p.n/a
Hauptverfasser:	Li, Zongwen, Cao, Xiaoxue, Zhang, Zhixiang, Qiao, Baoshi, Tian, Feng, Dai, Yue, Bodepudi, Srikrishna Chanakya, Liu, Xinyu, Chai, Jian, Liu, Dajian, Anwar, Muhammad Abid, Han, Xun, Xue, Fei, Fang, Wenzhang, Dan, Yaping, Zhao, Yuda, Hu, Huan, Yu, Bin, Gao, Chao, Xu, Yang
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorptivity Avalanche diodes avalanche photodetectors Data transfer (computers) Electromagnetic absorption epitaxial silicon Graphene Heterostructures high avalanche gain High gain infrared detection Infrared radiation macro‐assembled graphene nanofilms Multilayers Multiplication Noise levels Photometers Silicon Two dimensional materials
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