Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterning
We explored the possibility to guide the forming process in a Ta/TiO 2 /Pt memristive device using an X-ray nanopatterning procedure, which enables the manipulation of the oxygen content at the nanoscale. The irradiation of selected areas of the sample by a 65 × 58 nm 2 synchrotron X-ray nanobeam lo...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-07, Vol.12 (29), p.11127-11132 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
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| creator | Mino, Lorenzo Bonino, Valentina Alessio, Andrea Picollo, Federico Kuncser, Andrei Mercioniu, Ionel Vlaicu, Aurel-Mihai Badica, Petre Brescia, Rosaria Fretto, Matteo Goss, Kalle Dittmann, Regina Truccato, Marco |
| description | We explored the possibility to guide the forming process in a Ta/TiO 2 /Pt memristive device using an X-ray nanopatterning procedure, which enables the manipulation of the oxygen content at the nanoscale. The irradiation of selected areas of the sample by a 65 × 58 nm 2 synchrotron X-ray nanobeam locally generated oxygen vacancies which resulted in the formation of a conductive filament in the desired position in the material. The subsequent application of an electric field between the electrodes was exploited to achieve reversible bipolar resistive switching. A multitechnique characterization was then performed, highlighting a local increase in the height of the crystal and the formation of a dislocation network, associated with the presence of Wadsley defects. Our results show that X-ray nanopatterning could open new avenues for a more deterministic implementation of electroforming in oxide-based memristive devices. |
| doi_str_mv | 10.1039/D4TC01815J |
| format | Article |
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The irradiation of selected areas of the sample by a 65 × 58 nm 2 synchrotron X-ray nanobeam locally generated oxygen vacancies which resulted in the formation of a conductive filament in the desired position in the material. The subsequent application of an electric field between the electrodes was exploited to achieve reversible bipolar resistive switching. A multitechnique characterization was then performed, highlighting a local increase in the height of the crystal and the formation of a dislocation network, associated with the presence of Wadsley defects. Our results show that X-ray nanopatterning could open new avenues for a more deterministic implementation of electroforming in oxide-based memristive devices.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/D4TC01815J</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Crystal defects ; Crystal dislocations ; Electric fields ; Electroforming ; Lattice vacancies ; Memory devices ; Oxygen ; Oxygen content ; Synchrotron radiation ; Tantalum ; Titanium dioxide</subject><ispartof>Journal of materials chemistry. 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Our results show that X-ray nanopatterning could open new avenues for a more deterministic implementation of electroforming in oxide-based memristive devices.</description><subject>Crystal defects</subject><subject>Crystal dislocations</subject><subject>Electric fields</subject><subject>Electroforming</subject><subject>Lattice vacancies</subject><subject>Memory devices</subject><subject>Oxygen</subject><subject>Oxygen content</subject><subject>Synchrotron radiation</subject><subject>Tantalum</subject><subject>Titanium dioxide</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LAzEQxYMoWGovfoKAN2E1f7fpUarWSsFLBW9LNpnolm5Sk7TYb29qRecy8-DHm5mH0CUlN5Twye29WE4JVVQ-n6ABI5JUY8nF6d_M6nM0SmlFSilaq3oyQP2838Sw6_w7zh-ATfA5hjUO7kfCGkzRLsT-QBTSQEq48zh8dRaqViewuIc-dil3O8AWdl1BcLvHb1XUe-y1DxudM0RfHC7QmdPrBKPfPkSvjw_L6VO1eJnNp3eLylAlcqWBWUNY3RonGKFWUaEok6SVLVdm7Jwh0tWWE1mPrXbOtqyVwBUz5XmrLB-iq6NvufhzCyk3q7CNvqxsOFGCUyropFDXR8rEkFIE12xi1-u4byhpDok2_4nyb8ZXai0</recordid><startdate>20240725</startdate><enddate>20240725</enddate><creator>Mino, Lorenzo</creator><creator>Bonino, Valentina</creator><creator>Alessio, Andrea</creator><creator>Picollo, Federico</creator><creator>Kuncser, Andrei</creator><creator>Mercioniu, Ionel</creator><creator>Vlaicu, Aurel-Mihai</creator><creator>Badica, Petre</creator><creator>Brescia, Rosaria</creator><creator>Fretto, Matteo</creator><creator>Goss, Kalle</creator><creator>Dittmann, Regina</creator><creator>Truccato, Marco</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3179-271X</orcidid><orcidid>https://orcid.org/0000-0003-0607-0627</orcidid><orcidid>https://orcid.org/0000-0003-1564-221X</orcidid><orcidid>https://orcid.org/0000-0002-9882-8361</orcidid><orcidid>https://orcid.org/0000-0003-1886-1864</orcidid><orcidid>https://orcid.org/0000-0002-3616-5494</orcidid><orcidid>https://orcid.org/0000-0002-1726-4243</orcidid></search><sort><creationdate>20240725</creationdate><title>Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterning</title><author>Mino, Lorenzo ; Bonino, Valentina ; Alessio, Andrea ; Picollo, Federico ; Kuncser, Andrei ; Mercioniu, Ionel ; Vlaicu, Aurel-Mihai ; Badica, Petre ; Brescia, Rosaria ; Fretto, Matteo ; Goss, Kalle ; Dittmann, Regina ; Truccato, Marco</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c184t-ae2dc026bcf4201d81481250b5b38c7ffc05f6d30567daffdb2b5e382c815d8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Crystal defects</topic><topic>Crystal dislocations</topic><topic>Electric fields</topic><topic>Electroforming</topic><topic>Lattice vacancies</topic><topic>Memory devices</topic><topic>Oxygen</topic><topic>Oxygen content</topic><topic>Synchrotron radiation</topic><topic>Tantalum</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mino, Lorenzo</creatorcontrib><creatorcontrib>Bonino, Valentina</creatorcontrib><creatorcontrib>Alessio, Andrea</creatorcontrib><creatorcontrib>Picollo, Federico</creatorcontrib><creatorcontrib>Kuncser, Andrei</creatorcontrib><creatorcontrib>Mercioniu, Ionel</creatorcontrib><creatorcontrib>Vlaicu, Aurel-Mihai</creatorcontrib><creatorcontrib>Badica, Petre</creatorcontrib><creatorcontrib>Brescia, Rosaria</creatorcontrib><creatorcontrib>Fretto, Matteo</creatorcontrib><creatorcontrib>Goss, Kalle</creatorcontrib><creatorcontrib>Dittmann, Regina</creatorcontrib><creatorcontrib>Truccato, Marco</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. 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A multitechnique characterization was then performed, highlighting a local increase in the height of the crystal and the formation of a dislocation network, associated with the presence of Wadsley defects. Our results show that X-ray nanopatterning could open new avenues for a more deterministic implementation of electroforming in oxide-based memristive devices.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/D4TC01815J</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-3179-271X</orcidid><orcidid>https://orcid.org/0000-0003-0607-0627</orcidid><orcidid>https://orcid.org/0000-0003-1564-221X</orcidid><orcidid>https://orcid.org/0000-0002-9882-8361</orcidid><orcidid>https://orcid.org/0000-0003-1886-1864</orcidid><orcidid>https://orcid.org/0000-0002-3616-5494</orcidid><orcidid>https://orcid.org/0000-0002-1726-4243</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Crystal defects Crystal dislocations Electric fields Electroforming Lattice vacancies Memory devices Oxygen Oxygen content Synchrotron radiation Tantalum Titanium dioxide |
| title | Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterning |
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