Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition

Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy....

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Veröffentlicht in:	High energy chemistry 2024-08, Vol.58 (4), p.440-445
Hauptverfasser:	Kudryashov, M. A., Mochalov, L. A., Kudryashova, Yu. P., Slapovskaya, E. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Gallium selenides Grain size Optical emission spectroscopy Physical Chemistry Plasma Chemistry Plasma enhanced chemical vapor deposition Plasma jets Silicon substrates Stoichiometry Thin films Vapor phases
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container_end_page	445
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container_title	High energy chemistry
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creator	Kudryashov, M. A. Mochalov, L. A. Kudryashova, Yu. P. Slapovskaya, E. A.
description	Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.
doi_str_mv	10.1134/S0018143924700309
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A. ; Mochalov, L. A. ; Kudryashova, Yu. P. ; Slapovskaya, E. A.</creator><creatorcontrib>Kudryashov, M. A. ; Mochalov, L. A. ; Kudryashova, Yu. P. ; Slapovskaya, E. A.</creatorcontrib><description>Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.</description><identifier>ISSN: 0018-1439</identifier><identifier>EISSN: 1608-3148</identifier><identifier>DOI: 10.1134/S0018143924700309</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemistry ; Chemistry and Materials Science ; Gallium selenides ; Grain size ; Optical emission spectroscopy ; Physical Chemistry ; Plasma Chemistry ; Plasma enhanced chemical vapor deposition ; Plasma jets ; Silicon substrates ; Stoichiometry ; Thin films ; Vapor phases</subject><ispartof>High energy chemistry, 2024-08, Vol.58 (4), p.440-445</ispartof><rights>Pleiades Publishing, Ltd. 2024. 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The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0018143924700309</doi><tpages>6</tpages></addata></record>
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subjects	Chemistry Chemistry and Materials Science Gallium selenides Grain size Optical emission spectroscopy Physical Chemistry Plasma Chemistry Plasma enhanced chemical vapor deposition Plasma jets Silicon substrates Stoichiometry Thin films Vapor phases
title	Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition
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