Effects of vacancy and Ge substitution in Janus Si2PAs monolayer: site-dependent electronic and magnetic properties

In this work, effective modulation of the electronic and magnetic properties of Janus Si 2 PAs monolayer is proposed using vacancy engineering and doping with Ge atom. Pristine Si 2 PAs monolayer is a non-magnetic indirect gap two-dimensional (2D) material with energy gap of 1.29(2.47) eV obtained f...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2024, Vol.130 (8), Article 571
Hauptverfasser:	Thuy, Huynh Thi Phuong, Van On, Vo, Guerrero-Sanchez, J., Hoat, D. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic properties Characterization and Evaluation of Materials Condensed Matter Physics Dilution Doping Electron spin Electronic properties Energy gap Germanium Machines Magnetic moments Magnetic properties Magnetic semiconductors Manufacturing Metallizing Monolayers Nanotechnology Optical and Electronic Materials Optoelectronics Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films Two dimensional materials
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