Application of the tight-binding method onto the Von Neumann equation
This paper presents a numerical framework for the analysis of quantum devices based on the Von Neumann (VN) equation, which involves the concept of the Tight-Binding Method (TBM). The model is based on the application of the Tight-Binding Hamiltonian within Quantum Liouville Type Equations and has t...
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| Veröffentlicht in: | Journal of computational electronics 2024-08, Vol.23 (4), p.707-717 |
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| container_title | Journal of computational electronics |
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| creator | Abdi, Alan Schulz, Dirk |
| description | This paper presents a numerical framework for the analysis of quantum devices based on the Von Neumann (VN) equation, which involves the concept of the Tight-Binding Method (TBM). The model is based on the application of the Tight-Binding Hamiltonian within Quantum Liouville Type Equations and has the advantage that the atomic structure of the materials used is taken into account. Furthermore, the influence of a Complex Absorbing Potential (CAP) as a complementary boundary condition and its essential contribution to the system stability with respect to the eigenvalue spectrum is discussed. |
| doi_str_mv | 10.1007/s10825-024-02173-6 |
| format | Article |
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| subjects | Atomic structure Binding Boundary conditions Eigenvalues Electrical Engineering Engineering Hamiltonian functions Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Optical and Electronic Materials Systems stability Theoretical |
| title | Application of the tight-binding method onto the Von Neumann equation |
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