Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

4H-SiC/ SiO 2 interface states play a major role in the performance and reliability of modern 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). To gain new insights into these interface states, we developed a cryogenic measurement technique that uses photon-assisted electron depop...

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Veröffentlicht in:	Journal of applied physics 2024-07, Vol.136 (3)
Hauptverfasser:	Weger, M., Kuegler, J., Nelhiebel, M., Moser, M., Bockstedte, M., Pobegen, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrons Field effect transistors Luminous intensity Measurement techniques Metal oxide semiconductors MOS devices MOSFETs Photons Population decline Semiconductor devices Silicon carbide Silicon dioxide Transistors
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