High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

Cubic silicon carbide (3C‐SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H‐SiC. Moreover, much lower concentration of interfacial traps between insulating oxide gate and 3C‐SiC helps fabricate reliable and long‐life devices like metal‐oxide‐semiconductor fie...

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Veröffentlicht in:	Energy & environmental materials (Hoboken, N.J.) N.J.), 2024-07, Vol.7 (4), p.n/a
Hauptverfasser:	Wang, Guobin, Sheng, Da, Yang, Yunfan, Li, Hui, Chai, Congcong, Xie, Zhenkai, Wang, Wenjun, Guo, Jiangang, Chen, Xiaolong
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Crystals cubic SiC Electronic equipment Field effect transistors high‐temperature solution growth high‐temperature surface tension Mass production Nucleation Polytypes Semiconductor devices Silicon Silicon carbide Silicon substrates Single crystals solid–liquid interfacial energy wide band gap semiconductor
Online-Zugang:	Volltext
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