Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microele...

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Veröffentlicht in:Laser & photonics reviews 2024-07, Vol.18 (7), p.n/a
Hauptverfasser: Yang, Zhoudong, Wang, Xinyue, Chen, Wei, Tang, Hongyu, Zhang, Rongjun, Fan, Xuejun, Zhang, Guoqi, Fan, Jiajie
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container_title Laser & photonics reviews
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Chen, Wei
Tang, Hongyu
Zhang, Rongjun
Fan, Xuejun
Zhang, Guoqi
Fan, Jiajie
description In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology. Raman spectroscopy relies on the principle of inelastic scattering of photons by substances, enabling nondestructive and fast detection of stress. A comprehensive review of Raman spectroscopy in characterizing residual stress within microelectronics manufacturing is presented, including basic principles, Raman‐stress relation, wavelength selection, and specific applications, with the aim of advancing Raman spectroscopy as a stress characterization tool for microelectronics manufacturing.
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Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology. Raman spectroscopy relies on the principle of inelastic scattering of photons by substances, enabling nondestructive and fast detection of stress. 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subjects Devices
Electric vehicles
Manufacturing
Mechanics (physics)
microelectronic manufacturing
Microelectronics
micro‐scale mechanics
Raman spectroscopy
Raman‐stress relation
Residual stress
Spectrum analysis
Strain analysis
Substrates
Thermal stress
title Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy
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