Up-and-Down Adjustment of the GaAs Loss Tangent Using Extreme Power Densities in a Subterahertz Cavity

We study variations in the dielectric properties of a semi-insulating Gallium arsenide (GaAs) wafer under millisecond pulses of extreme subterahertz power density of up to 180 kW/mm2 at 263 GHz. Increasing the duration and power of the pulse, we have obtained sequential down- and upshifts within the...

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Veröffentlicht in:	IEEE transactions on terahertz science and technology 2024-07, Vol.14 (4), p.537-542
Hauptverfasser:	Kulygin, Maxim L., Novikov, Evgeny A., Kamensky, Maxim V., Belousov, Vladimir I., Litovsky, Ilya A., Fokin, Andrey P., Ananichev, Andrey A., Orlovsky, Alexei A., Parshin, Vladimir V., Serov, Evgeny A., Proyavin, Mikhail D., Malshakova, Olga A., Afanasiev, Andrey V., Sorokin, Andrey A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cavity resonators Chemicals dielectric films dielectric losses Dielectric properties Effectiveness Gallium arsenide Gallium arsenide (GaAs) Gyrotrons Joule heating materials annealing Microscopy Microwave imaging Millimeter wave propagation Optical surface waves Resonant frequency Semiconductor devices semiconductor nanostructures surface discharges Surface layers
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