33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure
Amorphous metal oxide semiconductors (AOS), especially indium‐gallium‐zinc oxide (IGZO), have been studied and applied in sensing, display and other industrial fields, including phototransistors, because of their outstanding electronic properties. [1] [2] However, due to its much low visible light r...
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| creator | Lin, Bosi Hu, Rundong Chen, Tong Zhou, Hang |
| description | Amorphous metal oxide semiconductors (AOS), especially indium‐gallium‐zinc oxide (IGZO), have been studied and applied in sensing, display and other industrial fields, including phototransistors, because of their outstanding electronic properties. [1] [2] However, due to its much low visible light response and limited mobility, IGZO could not match the rapidly developing application needs of phototransistor. [3] The construction of photo‐TFT (thin film transistor) with better electronical performance and stronger light response has become a key issue.[4] Therefore, indium‐zinc oxide (IZO) with relative high mobility (15~20 cm2 /V.s) and perovskite with high photosensitivity come into view.[5] In this study, we report a Ruddlesden‐Popper (RP) quasi‐two‐dimensional (quasi‐2D) perovskite‐IZO phototransistor with heterostructure. A quasi‐2D perovskite layer is spin‐coated on the high‐mobility IZO channel TFT, which enables ultralow off‐state dark current of 10‐12 A, high responsivity and detectivity under visible light, especially high responsivity and detectivity of 1480 A/W and 2.21×10 14 Jones under 525 nm green light illumination. |
| doi_str_mv | 10.1002/sdtp.17057 |
| format | Article |
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[1] [2] However, due to its much low visible light response and limited mobility, IGZO could not match the rapidly developing application needs of phototransistor. [3] The construction of photo‐TFT (thin film transistor) with better electronical performance and stronger light response has become a key issue.[4] Therefore, indium‐zinc oxide (IZO) with relative high mobility (15~20 cm2 /V.s) and perovskite with high photosensitivity come into view.[5] In this study, we report a Ruddlesden‐Popper (RP) quasi‐two‐dimensional (quasi‐2D) perovskite‐IZO phototransistor with heterostructure. A quasi‐2D perovskite layer is spin‐coated on the high‐mobility IZO channel TFT, which enables ultralow off‐state dark current of 10‐12 A, high responsivity and detectivity under visible light, especially high responsivity and detectivity of 1480 A/W and 2.21×10 14 Jones under 525 nm green light illumination.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.17057</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Amorphous semiconductors ; Dark current ; Detectivity ; Gallium ; Heterojunction ; Heterostructures ; Indium ; Indium gallium zinc oxide ; Indium-zinc oxide (IZO) ; Light ; Metal oxide semiconductors ; Mobility ; Perovskites ; Photosensitivity ; Phototransistor ; Phototransistors ; Quasi-two-dimensional perovskite ; Responsivity ; Semiconductor devices ; Thin film transistors ; Zinc oxide ; Zinc oxides</subject><ispartof>SID International Symposium Digest of technical papers, 2024-04, Vol.55 (S1), p.275-277</ispartof><rights>2024 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1057-4b3f5f6361af3df2a4a8445c3080c79ea279748c9cbe85dd2d6b6a52817dfa573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.17057$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.17057$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Lin, Bosi</creatorcontrib><creatorcontrib>Hu, Rundong</creatorcontrib><creatorcontrib>Chen, Tong</creatorcontrib><creatorcontrib>Zhou, Hang</creatorcontrib><title>33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure</title><title>SID International Symposium Digest of technical papers</title><description>Amorphous metal oxide semiconductors (AOS), especially indium‐gallium‐zinc oxide (IGZO), have been studied and applied in sensing, display and other industrial fields, including phototransistors, because of their outstanding electronic properties. [1] [2] However, due to its much low visible light response and limited mobility, IGZO could not match the rapidly developing application needs of phototransistor. [3] The construction of photo‐TFT (thin film transistor) with better electronical performance and stronger light response has become a key issue.[4] Therefore, indium‐zinc oxide (IZO) with relative high mobility (15~20 cm2 /V.s) and perovskite with high photosensitivity come into view.[5] In this study, we report a Ruddlesden‐Popper (RP) quasi‐two‐dimensional (quasi‐2D) perovskite‐IZO phototransistor with heterostructure. A quasi‐2D perovskite layer is spin‐coated on the high‐mobility IZO channel TFT, which enables ultralow off‐state dark current of 10‐12 A, high responsivity and detectivity under visible light, especially high responsivity and detectivity of 1480 A/W and 2.21×10 14 Jones under 525 nm green light illumination.</description><subject>Amorphous semiconductors</subject><subject>Dark current</subject><subject>Detectivity</subject><subject>Gallium</subject><subject>Heterojunction</subject><subject>Heterostructures</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>Indium-zinc oxide (IZO)</subject><subject>Light</subject><subject>Metal oxide semiconductors</subject><subject>Mobility</subject><subject>Perovskites</subject><subject>Photosensitivity</subject><subject>Phototransistor</subject><subject>Phototransistors</subject><subject>Quasi-two-dimensional perovskite</subject><subject>Responsivity</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEURoMoWKsbnyDgTpg2P5Nkxp22aguFFq0gbkI6ydhpdTImmZbufASf0Sdx6rh2deFyvns_DgDnGPUwQqTvdah6WCAmDkCHYJ5ECLP0EHQQSkWUcv58DE68XyFEaRynHbCk9Pvzi17BUfG6hA_GV7b0xaYIO6hKDSd2C4fKreGgds6UAc6WNtjgVAP5YB28Ud5oaEs4M85u_LoIpj8uX8opHJnQrHxwdRZqZ07BUa7evDn7m13wdHc7H4yiyfR-PLieRBluWkfxguYs55RjlVOdExWrJI5ZRlGCMpEaRUQq4iRLs4VJmNZE8wVXjCRY6FwxQbvgor1bOftRGx_kytaubF5KigQRhHHGGuqypbKmoncml5Ur3pXbSYzk3qTcm5S_JhsYt_C2eDO7f0j5OJzP2swPrh133g</recordid><startdate>202404</startdate><enddate>202404</enddate><creator>Lin, Bosi</creator><creator>Hu, Rundong</creator><creator>Chen, Tong</creator><creator>Zhou, Hang</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>202404</creationdate><title>33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure</title><author>Lin, Bosi ; Hu, Rundong ; Chen, Tong ; Zhou, Hang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1057-4b3f5f6361af3df2a4a8445c3080c79ea279748c9cbe85dd2d6b6a52817dfa573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Amorphous semiconductors</topic><topic>Dark current</topic><topic>Detectivity</topic><topic>Gallium</topic><topic>Heterojunction</topic><topic>Heterostructures</topic><topic>Indium</topic><topic>Indium gallium zinc oxide</topic><topic>Indium-zinc oxide (IZO)</topic><topic>Light</topic><topic>Metal oxide semiconductors</topic><topic>Mobility</topic><topic>Perovskites</topic><topic>Photosensitivity</topic><topic>Phototransistor</topic><topic>Phototransistors</topic><topic>Quasi-two-dimensional perovskite</topic><topic>Responsivity</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Bosi</creatorcontrib><creatorcontrib>Hu, Rundong</creatorcontrib><creatorcontrib>Chen, Tong</creatorcontrib><creatorcontrib>Zhou, Hang</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Bosi</au><au>Hu, Rundong</au><au>Chen, Tong</au><au>Zhou, Hang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2024-04</date><risdate>2024</risdate><volume>55</volume><issue>S1</issue><spage>275</spage><epage>277</epage><pages>275-277</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>Amorphous metal oxide semiconductors (AOS), especially indium‐gallium‐zinc oxide (IGZO), have been studied and applied in sensing, display and other industrial fields, including phototransistors, because of their outstanding electronic properties. [1] [2] However, due to its much low visible light response and limited mobility, IGZO could not match the rapidly developing application needs of phototransistor. [3] The construction of photo‐TFT (thin film transistor) with better electronical performance and stronger light response has become a key issue.[4] Therefore, indium‐zinc oxide (IZO) with relative high mobility (15~20 cm2 /V.s) and perovskite with high photosensitivity come into view.[5] In this study, we report a Ruddlesden‐Popper (RP) quasi‐two‐dimensional (quasi‐2D) perovskite‐IZO phototransistor with heterostructure. A quasi‐2D perovskite layer is spin‐coated on the high‐mobility IZO channel TFT, which enables ultralow off‐state dark current of 10‐12 A, high responsivity and detectivity under visible light, especially high responsivity and detectivity of 1480 A/W and 2.21×10 14 Jones under 525 nm green light illumination.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.17057</doi><tpages>3</tpages></addata></record> |
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| subjects | Amorphous semiconductors Dark current Detectivity Gallium Heterojunction Heterostructures Indium Indium gallium zinc oxide Indium-zinc oxide (IZO) Light Metal oxide semiconductors Mobility Perovskites Photosensitivity Phototransistor Phototransistors Quasi-two-dimensional perovskite Responsivity Semiconductor devices Thin film transistors Zinc oxide Zinc oxides |
| title | 33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure |
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