The Effect of Deposition Temperature on TiN Thin Films for the Electrode Layer of 3D Capacitors Prepared by Atomic Layer Deposition

The TiN thin film is considered a promising electrode layer for 3D capacitors. In this study, TiN thin films were prepared on Si substrates using atomic layer deposition (ALD) at various temperatures from 375 °C to 475 °C. The crystallization behavior, microstructure, and conductance properties of t...

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Veröffentlicht in:	Coatings (Basel) 2024-06, Vol.14 (6), p.724
Hauptverfasser:	Chen, Xingyu, Zhang, Jing, Gao, Lingshan, Zhang, Faqiang, Ma, Mingsheng, Liu, Zhifu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aspect ratio Atomic layer epitaxy Capacitors Chemical vapor deposition Crystallization Dielectric films Electrical resistivity Electrodes Electronic components industry Grain boundaries Morphology Silicon substrates Silicon wafers Temperature Thin films Titanium nitride
Online-Zugang:	Volltext
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