Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrica...
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| creator | Pasquale, Gabriele Sun, Zhe Watanabe, Kenji Taniguchi, Takashi Kis, Andras |
| description | The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 {\mu}V K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena. |
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| subjects | Electrical properties Energy conversion Graphene Heterostructures Indium selenides Low temperature Nernst-Ettingshausen effect Photoelectric effect Quantum phenomena Spintronics Thermoelectricity |
| title | Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures |
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