Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying
Oxysulfides BiCuSO, with a natural superlattice structure, have extremely low thermal conductivity and high Seebeck coefficient. However, the thermoelectric performance of BiCuSO is restricted by its high electrical resistivity resulting from its low carrier concentration and Hall mobility. In this...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2024-06, Vol.35 (18), p.1192, Article 1192 |
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| creator | Yang, Mengxiang Yang, Manman Zhang, Yiwen Su, Taichao Zhu, Hongyu |
| description | Oxysulfides BiCuSO, with a natural superlattice structure, have extremely low thermal conductivity and high Seebeck coefficient. However, the thermoelectric performance of BiCuSO is restricted by its high electrical resistivity resulting from its low carrier concentration and Hall mobility. In this study, BiCuSO was rapidly prepared by one-step high pressure technique. The Pb doping at the Bi site of BiCuSO increases the carrier concentration and decreases the resistivity significantly, which results in an enhanced power factor of ~ 1.0 μWcm
−1
K
−2
at room temperature for Bi
0.97
Pb
0.03
CuSO. Meanwhile, substituting Se for S in BiCuSO not only improves the Hall mobility but also decreases the phonon thermal conductivity. Benefiting from the high power factor and low thermal conductivity induced by Pb doping and Se alloying, an enhanced
ZT
of ~ 0.17 at 673 K is obtained for the sample of Bi
0.97
Pb
0.03
CuS
0.55
Se
0.45
O. |
| doi_str_mv | 10.1007/s10854-024-12985-8 |
| format | Article |
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−1
K
−2
at room temperature for Bi
0.97
Pb
0.03
CuSO. Meanwhile, substituting Se for S in BiCuSO not only improves the Hall mobility but also decreases the phonon thermal conductivity. Benefiting from the high power factor and low thermal conductivity induced by Pb doping and Se alloying, an enhanced
ZT
of ~ 0.17 at 673 K is obtained for the sample of Bi
0.97
Pb
0.03
CuS
0.55
Se
0.45
O.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-12985-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Alloying ; Carrier density ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper ; Doping ; Electrical resistivity ; Electron mobility ; Energy ; Engineering ; Hall effect ; Heat conductivity ; Heat transfer ; Lead ; Materials Science ; Optical and Electronic Materials ; Power factor ; Raw materials ; Room temperature ; Seebeck effect ; Selenium ; Superlattices ; Temperature ; Thermal conductivity ; Thermoelectricity</subject><ispartof>Journal of materials science. Materials in electronics, 2024-06, Vol.35 (18), p.1192, Article 1192</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-e1868171a2e1a3233aa6549d8dee19c4262428a20c55c3e1e87fe1e8c29ac55f3</cites><orcidid>0000-0003-4668-8616</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-024-12985-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-024-12985-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Yang, Mengxiang</creatorcontrib><creatorcontrib>Yang, Manman</creatorcontrib><creatorcontrib>Zhang, Yiwen</creatorcontrib><creatorcontrib>Su, Taichao</creatorcontrib><creatorcontrib>Zhu, Hongyu</creatorcontrib><title>Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Oxysulfides BiCuSO, with a natural superlattice structure, have extremely low thermal conductivity and high Seebeck coefficient. However, the thermoelectric performance of BiCuSO is restricted by its high electrical resistivity resulting from its low carrier concentration and Hall mobility. In this study, BiCuSO was rapidly prepared by one-step high pressure technique. The Pb doping at the Bi site of BiCuSO increases the carrier concentration and decreases the resistivity significantly, which results in an enhanced power factor of ~ 1.0 μWcm
−1
K
−2
at room temperature for Bi
0.97
Pb
0.03
CuSO. Meanwhile, substituting Se for S in BiCuSO not only improves the Hall mobility but also decreases the phonon thermal conductivity. Benefiting from the high power factor and low thermal conductivity induced by Pb doping and Se alloying, an enhanced
ZT
of ~ 0.17 at 673 K is obtained for the sample of Bi
0.97
Pb
0.03
CuS
0.55
Se
0.45
O.</description><subject>Alloying</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Doping</subject><subject>Electrical resistivity</subject><subject>Electron mobility</subject><subject>Energy</subject><subject>Engineering</subject><subject>Hall effect</subject><subject>Heat conductivity</subject><subject>Heat transfer</subject><subject>Lead</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Power factor</subject><subject>Raw materials</subject><subject>Room temperature</subject><subject>Seebeck effect</subject><subject>Selenium</subject><subject>Superlattices</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKtfwFPAczSZJLvZo5b6j0KFKngLaXa23dJu1mR76Ld36wrevMwwM--9gR8h14LfCs7zuyS40YpxUExAYTQzJ2QkdC6ZMvB5Ska80DlTGuCcXKS04ZxnSpoReZ02a9d4LGm3xrgLuEXfxdrTFmMV4u54o6GiD_Vkv5jT5YG-LWkZ2rpZUdeUdIHUbbfh0M-X5Kxy24RXv31MPh6n75NnNps_vUzuZ8wD5x1DYTIjcuEAhZMgpXOZVkVpSkRReAUZKDAOuNfaSxRo8upYPRSuX1VyTG6G3DaGrz2mzm7CPjb9Syt5zgsAIbJeBYPKx5BSxMq2sd65eLCC2yMzOzCzPTP7w8ya3iQHU-rFzQrjX_Q_rm8g323j</recordid><startdate>20240601</startdate><enddate>20240601</enddate><creator>Yang, Mengxiang</creator><creator>Yang, Manman</creator><creator>Zhang, Yiwen</creator><creator>Su, Taichao</creator><creator>Zhu, Hongyu</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4668-8616</orcidid></search><sort><creationdate>20240601</creationdate><title>Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying</title><author>Yang, Mengxiang ; Yang, Manman ; Zhang, Yiwen ; Su, Taichao ; Zhu, Hongyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-e1868171a2e1a3233aa6549d8dee19c4262428a20c55c3e1e87fe1e8c29ac55f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Alloying</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Doping</topic><topic>Electrical resistivity</topic><topic>Electron mobility</topic><topic>Energy</topic><topic>Engineering</topic><topic>Hall effect</topic><topic>Heat conductivity</topic><topic>Heat transfer</topic><topic>Lead</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Power factor</topic><topic>Raw materials</topic><topic>Room temperature</topic><topic>Seebeck effect</topic><topic>Selenium</topic><topic>Superlattices</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Mengxiang</creatorcontrib><creatorcontrib>Yang, Manman</creatorcontrib><creatorcontrib>Zhang, Yiwen</creatorcontrib><creatorcontrib>Su, Taichao</creatorcontrib><creatorcontrib>Zhu, Hongyu</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Mengxiang</au><au>Yang, Manman</au><au>Zhang, Yiwen</au><au>Su, Taichao</au><au>Zhu, Hongyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-06-01</date><risdate>2024</risdate><volume>35</volume><issue>18</issue><spage>1192</spage><pages>1192-</pages><artnum>1192</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Oxysulfides BiCuSO, with a natural superlattice structure, have extremely low thermal conductivity and high Seebeck coefficient. However, the thermoelectric performance of BiCuSO is restricted by its high electrical resistivity resulting from its low carrier concentration and Hall mobility. In this study, BiCuSO was rapidly prepared by one-step high pressure technique. The Pb doping at the Bi site of BiCuSO increases the carrier concentration and decreases the resistivity significantly, which results in an enhanced power factor of ~ 1.0 μWcm
−1
K
−2
at room temperature for Bi
0.97
Pb
0.03
CuSO. Meanwhile, substituting Se for S in BiCuSO not only improves the Hall mobility but also decreases the phonon thermal conductivity. Benefiting from the high power factor and low thermal conductivity induced by Pb doping and Se alloying, an enhanced
ZT
of ~ 0.17 at 673 K is obtained for the sample of Bi
0.97
Pb
0.03
CuS
0.55
Se
0.45
O.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-12985-8</doi><orcidid>https://orcid.org/0000-0003-4668-8616</orcidid></addata></record> |
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| subjects | Alloying Carrier density Characterization and Evaluation of Materials Chemistry and Materials Science Copper Doping Electrical resistivity Electron mobility Energy Engineering Hall effect Heat conductivity Heat transfer Lead Materials Science Optical and Electronic Materials Power factor Raw materials Room temperature Seebeck effect Selenium Superlattices Temperature Thermal conductivity Thermoelectricity |
| title | Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying |
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