10¹² Cycles

1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices wit...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-01, Vol.71 (7), p.4403
Hauptverfasser:	Lu, Tai, Wei, Wei, Pengpeng Sang, Li, Xiaopeng, Dou, Xiaoyu, Zhao, Guoqing, Jiang, Pengfei, Luo, Qing, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi
Format:	Artikel
Sprache:	eng
Schlagworte:	Ferroelectricity Silicon
Online-Zugang:	Volltext
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