10¹² Cycles
1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices wit...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-01, Vol.71 (7), p.4403 |
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| container_issue | 7 |
| container_start_page | 4403 |
| container_title | IEEE transactions on electron devices |
| container_volume | 71 |
| creator | Lu, Tai Wei, Wei Pengpeng Sang Li, Xiaopeng Dou, Xiaoyu Zhao, Guoqing Jiang, Pengfei Luo, Qing Zhan, Xuepeng Wu, Jixuan Chen, Jiezhi |
| description | 1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices with better performances and robust reliabilities. |
| doi_str_mv | 10.1109/TED.2024.3400930 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_3070781234</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3070781234</sourcerecordid><originalsourceid>FETCH-proquest_journals_30707812343</originalsourceid><addsrcrecordid>eNpjYJAwNNAzNDSw1A9xddEzMjAy0TM2MTCwNDZgYuA0NDU117U0MzFjYeA0MDC00LU0tjDmYOAqLs4Ccs1MTIw4GXgNDQ7tPLRJwbkyOSe1mIeBNS0xpziVF0pzMyi7uYY4e-gWFOUXlqYWl8Rn5ZcW5QGl4o0NzA3MLQyNjE2MiVMFAHTkLPw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3070781234</pqid></control><display><type>article</type><title>10¹² Cycles</title><source>IEEE Electronic Library (IEL)</source><creator>Lu, Tai ; Wei, Wei ; Pengpeng Sang ; Li, Xiaopeng ; Dou, Xiaoyu ; Zhao, Guoqing ; Jiang, Pengfei ; Luo, Qing ; Zhan, Xuepeng ; Wu, Jixuan ; Chen, Jiezhi</creator><creatorcontrib>Lu, Tai ; Wei, Wei ; Pengpeng Sang ; Li, Xiaopeng ; Dou, Xiaoyu ; Zhao, Guoqing ; Jiang, Pengfei ; Luo, Qing ; Zhan, Xuepeng ; Wu, Jixuan ; Chen, Jiezhi</creatorcontrib><description>1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices with better performances and robust reliabilities.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3400930</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Ferroelectricity ; Silicon</subject><ispartof>IEEE transactions on electron devices, 2024-01, Vol.71 (7), p.4403</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Lu, Tai</creatorcontrib><creatorcontrib>Wei, Wei</creatorcontrib><creatorcontrib>Pengpeng Sang</creatorcontrib><creatorcontrib>Li, Xiaopeng</creatorcontrib><creatorcontrib>Dou, Xiaoyu</creatorcontrib><creatorcontrib>Zhao, Guoqing</creatorcontrib><creatorcontrib>Jiang, Pengfei</creatorcontrib><creatorcontrib>Luo, Qing</creatorcontrib><creatorcontrib>Zhan, Xuepeng</creatorcontrib><creatorcontrib>Wu, Jixuan</creatorcontrib><creatorcontrib>Chen, Jiezhi</creatorcontrib><title>10¹² Cycles</title><title>IEEE transactions on electron devices</title><description>1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices with better performances and robust reliabilities.</description><subject>Ferroelectricity</subject><subject>Silicon</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpjYJAwNNAzNDSw1A9xddEzMjAy0TM2MTCwNDZgYuA0NDU117U0MzFjYeA0MDC00LU0tjDmYOAqLs4Ccs1MTIw4GXgNDQ7tPLRJwbkyOSe1mIeBNS0xpziVF0pzMyi7uYY4e-gWFOUXlqYWl8Rn5ZcW5QGl4o0NzA3MLQyNjE2MiVMFAHTkLPw</recordid><startdate>20240101</startdate><enddate>20240101</enddate><creator>Lu, Tai</creator><creator>Wei, Wei</creator><creator>Pengpeng Sang</creator><creator>Li, Xiaopeng</creator><creator>Dou, Xiaoyu</creator><creator>Zhao, Guoqing</creator><creator>Jiang, Pengfei</creator><creator>Luo, Qing</creator><creator>Zhan, Xuepeng</creator><creator>Wu, Jixuan</creator><creator>Chen, Jiezhi</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20240101</creationdate><title>10¹² Cycles</title><author>Lu, Tai ; Wei, Wei ; Pengpeng Sang ; Li, Xiaopeng ; Dou, Xiaoyu ; Zhao, Guoqing ; Jiang, Pengfei ; Luo, Qing ; Zhan, Xuepeng ; Wu, Jixuan ; Chen, Jiezhi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_30707812343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Ferroelectricity</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Tai</creatorcontrib><creatorcontrib>Wei, Wei</creatorcontrib><creatorcontrib>Pengpeng Sang</creatorcontrib><creatorcontrib>Li, Xiaopeng</creatorcontrib><creatorcontrib>Dou, Xiaoyu</creatorcontrib><creatorcontrib>Zhao, Guoqing</creatorcontrib><creatorcontrib>Jiang, Pengfei</creatorcontrib><creatorcontrib>Luo, Qing</creatorcontrib><creatorcontrib>Zhan, Xuepeng</creatorcontrib><creatorcontrib>Wu, Jixuan</creatorcontrib><creatorcontrib>Chen, Jiezhi</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Tai</au><au>Wei, Wei</au><au>Pengpeng Sang</au><au>Li, Xiaopeng</au><au>Dou, Xiaoyu</au><au>Zhao, Guoqing</au><au>Jiang, Pengfei</au><au>Luo, Qing</au><au>Zhan, Xuepeng</au><au>Wu, Jixuan</au><au>Chen, Jiezhi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>10¹² Cycles</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2024-01-01</date><risdate>2024</risdate><volume>71</volume><issue>7</issue><spage>4403</spage><pages>4403-</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><abstract>1012 cycles at 2.5 MV/cm) have been observed in Si-doped Hf0.7Zr0.3O2 devices. The average switching time with three electrode sizes is smaller than that of the standard HZO group. Our data strongly indicate that Si doping in Hf0.7Zr0.3O2 film is a feasible way to fabricate ferroelectric devices with better performances and robust reliabilities.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/TED.2024.3400930</doi></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2024-01, Vol.71 (7), p.4403 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Ferroelectricity Silicon |
| title | 10¹² Cycles |
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