Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs
We studied the improvement in the performance of back-channel-etched oxide TFT with a top gate (TG) by Ar/O2 plasma treatment. The generation of oxide nanoparticles in the offset region of amorphous InGaZnO was observed from TEM image upon Ar/O2 plasma treatment. This results in the reduction of res...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-07, Vol.71 (7), p.4160-4165 |
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| container_title | IEEE transactions on electron devices |
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| creator | Jeong, Myeonggi Kim, Junyeong Bae, Jinbaek Mobiadul Islam, Md Lee, Jiseob Nahar, Sabiqun Priyadarshi, Sunaina Jang, Jin |
| description | We studied the improvement in the performance of back-channel-etched oxide TFT with a top gate (TG) by Ar/O2 plasma treatment. The generation of oxide nanoparticles in the offset region of amorphous InGaZnO was observed from TEM image upon Ar/O2 plasma treatment. This results in the reduction of resistivity in the offset region and performance improvement of dual-gate oxide TFTs. The field-effect mobility increases from 7.7 to 22.5 cm2/V \cdot s, and the {V}_{\text {TH}} shift by positive bias temperature stress (PBTS) decreases from 0.7 to 0.3 V. Performance improvement was observed only in structure, where the TG is exposed in air. The performance improvement of the TFTs results in the operation frequency of the ring oscillator (RO) made of the dual-gate TFTs increasing from 17.75 to 113.4 kHz. |
| doi_str_mv | 10.1109/TED.2024.3404409 |
| format | Article |
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The generation of oxide nanoparticles in the offset region of amorphous InGaZnO was observed from TEM image upon Ar/O2 plasma treatment. This results in the reduction of resistivity in the offset region and performance improvement of dual-gate oxide TFTs. The field-effect mobility increases from 7.7 to 22.5 cm2/V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula> s, and the <inline-formula> <tex-math notation="LaTeX">{V}_{\text {TH}} </tex-math></inline-formula> shift by positive bias temperature stress (PBTS) decreases from 0.7 to 0.3 V. Performance improvement was observed only in structure, where the TG is exposed in air. The performance improvement of the TFTs results in the operation frequency of the ring oscillator (RO) made of the dual-gate TFTs increasing from 17.75 to 113.4 kHz.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3404409</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Atmospheric pressure plasma (APP) treatment ; Indium gallium zinc oxide ; InGaZnO (IGZO) ; Iron ; Logic gates ; Nanoparticles ; Oxygen plasma ; oxygen radical ; Performance evaluation ; Plasma temperature ; Plasmas ; Thin film transistors ; thin-film transistor (TFT)</subject><ispartof>IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4160-4165</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-0691-575X ; 0000-0003-0800-6119 ; 0000-0001-9200-0830 ; 0000-0002-7572-5669 ; 0000-0002-1102-5356 ; 0000-0003-2521-2379 ; 0000-0002-9522-0852</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10541933$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10541933$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jeong, Myeonggi</creatorcontrib><creatorcontrib>Kim, Junyeong</creatorcontrib><creatorcontrib>Bae, Jinbaek</creatorcontrib><creatorcontrib>Mobiadul Islam, Md</creatorcontrib><creatorcontrib>Lee, Jiseob</creatorcontrib><creatorcontrib>Nahar, Sabiqun</creatorcontrib><creatorcontrib>Priyadarshi, Sunaina</creatorcontrib><creatorcontrib>Jang, Jin</creatorcontrib><title>Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[We studied the improvement in the performance of back-channel-etched oxide TFT with a top gate (TG) by Ar/O2 plasma treatment. The generation of oxide nanoparticles in the offset region of amorphous InGaZnO was observed from TEM image upon Ar/O2 plasma treatment. This results in the reduction of resistivity in the offset region and performance improvement of dual-gate oxide TFTs. The field-effect mobility increases from 7.7 to 22.5 cm2/V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula> s, and the <inline-formula> <tex-math notation="LaTeX">{V}_{\text {TH}} </tex-math></inline-formula> shift by positive bias temperature stress (PBTS) decreases from 0.7 to 0.3 V. Performance improvement was observed only in structure, where the TG is exposed in air. The performance improvement of the TFTs results in the operation frequency of the ring oscillator (RO) made of the dual-gate TFTs increasing from 17.75 to 113.4 kHz.]]></description><subject>Annealing</subject><subject>Atmospheric pressure plasma (APP) treatment</subject><subject>Indium gallium zinc oxide</subject><subject>InGaZnO (IGZO)</subject><subject>Iron</subject><subject>Logic gates</subject><subject>Nanoparticles</subject><subject>Oxygen plasma</subject><subject>oxygen radical</subject><subject>Performance evaluation</subject><subject>Plasma temperature</subject><subject>Plasmas</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotkM1rwkAQxZfSQq3tvYceFnqOzma_kqNYtYI0HtJLL2HdnUDEbNJNLPrfG7HM4cfAe2-GR8grgwljkE7zxcckhlhMuAAhIL0jIyaljlIl1D0ZAbAkSnnCH8lT1-2HVQkRjwiu0GMwfdV42pR07Vfmx2f0y_imNaGv7AHp7kxnYZrFdHswXW3o4tQ23TEgLZtAtxgG1MZbpOu6Dc0f1uj7a1h2qhzSfJl3z-ShNIcOX_45Jt_LRT7_jDbZaj2fbaKKcdFH3MhEaCn4TnClnCy11BYgdgakc2CdVbbUwu1iqaxlaeJiZVwqBo_j1xmT91vu8MfvEbu-2DfH4IeTBQcNOhmqgkH1dlNViFi0oapNOBcMpGAp5_wC8a1gfg</recordid><startdate>20240701</startdate><enddate>20240701</enddate><creator>Jeong, Myeonggi</creator><creator>Kim, Junyeong</creator><creator>Bae, Jinbaek</creator><creator>Mobiadul Islam, Md</creator><creator>Lee, Jiseob</creator><creator>Nahar, Sabiqun</creator><creator>Priyadarshi, Sunaina</creator><creator>Jang, Jin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0691-575X</orcidid><orcidid>https://orcid.org/0000-0003-0800-6119</orcidid><orcidid>https://orcid.org/0000-0001-9200-0830</orcidid><orcidid>https://orcid.org/0000-0002-7572-5669</orcidid><orcidid>https://orcid.org/0000-0002-1102-5356</orcidid><orcidid>https://orcid.org/0000-0003-2521-2379</orcidid><orcidid>https://orcid.org/0000-0002-9522-0852</orcidid></search><sort><creationdate>20240701</creationdate><title>Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs</title><author>Jeong, Myeonggi ; Kim, Junyeong ; Bae, Jinbaek ; Mobiadul Islam, Md ; Lee, Jiseob ; Nahar, Sabiqun ; Priyadarshi, Sunaina ; Jang, Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i134t-3a5847543b4366d5f757c002da05dd0cdc6cf74db256cc198d26ad94475d3d3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Annealing</topic><topic>Atmospheric pressure plasma (APP) treatment</topic><topic>Indium gallium zinc oxide</topic><topic>InGaZnO (IGZO)</topic><topic>Iron</topic><topic>Logic gates</topic><topic>Nanoparticles</topic><topic>Oxygen plasma</topic><topic>oxygen radical</topic><topic>Performance evaluation</topic><topic>Plasma temperature</topic><topic>Plasmas</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeong, Myeonggi</creatorcontrib><creatorcontrib>Kim, Junyeong</creatorcontrib><creatorcontrib>Bae, Jinbaek</creatorcontrib><creatorcontrib>Mobiadul Islam, Md</creatorcontrib><creatorcontrib>Lee, Jiseob</creatorcontrib><creatorcontrib>Nahar, Sabiqun</creatorcontrib><creatorcontrib>Priyadarshi, Sunaina</creatorcontrib><creatorcontrib>Jang, Jin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeong, Myeonggi</au><au>Kim, Junyeong</au><au>Bae, Jinbaek</au><au>Mobiadul Islam, Md</au><au>Lee, Jiseob</au><au>Nahar, Sabiqun</au><au>Priyadarshi, Sunaina</au><au>Jang, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-07-01</date><risdate>2024</risdate><volume>71</volume><issue>7</issue><spage>4160</spage><epage>4165</epage><pages>4160-4165</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[We studied the improvement in the performance of back-channel-etched oxide TFT with a top gate (TG) by Ar/O2 plasma treatment. The generation of oxide nanoparticles in the offset region of amorphous InGaZnO was observed from TEM image upon Ar/O2 plasma treatment. This results in the reduction of resistivity in the offset region and performance improvement of dual-gate oxide TFTs. The field-effect mobility increases from 7.7 to 22.5 cm2/V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula> s, and the <inline-formula> <tex-math notation="LaTeX">{V}_{\text {TH}} </tex-math></inline-formula> shift by positive bias temperature stress (PBTS) decreases from 0.7 to 0.3 V. Performance improvement was observed only in structure, where the TG is exposed in air. The performance improvement of the TFTs results in the operation frequency of the ring oscillator (RO) made of the dual-gate TFTs increasing from 17.75 to 113.4 kHz.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2024.3404409</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-0691-575X</orcidid><orcidid>https://orcid.org/0000-0003-0800-6119</orcidid><orcidid>https://orcid.org/0000-0001-9200-0830</orcidid><orcidid>https://orcid.org/0000-0002-7572-5669</orcidid><orcidid>https://orcid.org/0000-0002-1102-5356</orcidid><orcidid>https://orcid.org/0000-0003-2521-2379</orcidid><orcidid>https://orcid.org/0000-0002-9522-0852</orcidid></addata></record> |
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| subjects | Annealing Atmospheric pressure plasma (APP) treatment Indium gallium zinc oxide InGaZnO (IGZO) Iron Logic gates Nanoparticles Oxygen plasma oxygen radical Performance evaluation Plasma temperature Plasmas Thin film transistors thin-film transistor (TFT) |
| title | Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs |
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